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Japanese Journal of Applied Physics

Volumn 49, Issue 2 Part 1, 2010, Pages

Stress in tin-doped indium oxide thin films formed on substrates by sputtering

(2) Nomura, Hideshi a,b Shimizu, Kazuharu a

a TORAY INDUSTRIES INC (Japan)

b NEW ENERGY AND INDUSTRIAL TECHNOLOGY DEVELOPMENT ORGANIZATION (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

COMPRESSIVE RESIDUAL STRESS; CRYSTALLIZATION TEMPERATURE; FILM DEPOSITION; HIGH-TEMPERATURE ANNEALING; INDIUM OXIDE; INTRINSIC STRESS; ITO FILMS; LOW RESISTIVITY; LOW TEMPERATURES; MIS-ORIENTATION; NITROGEN ATMOSPHERES; ROOM TEMPERATURE; SILICON SUBSTRATES; SODA LIME GLASS SUBSTRATE; SUBSTRATE TEMPERATURE; THERMAL-ANNEALING; TIN DOPED INDIUM OXIDE;

ANNEALING; INDIUM; INDIUM COMPOUNDS; OXIDE FILMS; RESIDUAL STRESSES; SUBSTRATES; TIN; TITANIUM COMPOUNDS; X RAY DIFFRACTION; X RAY DIFFRACTION ANALYSIS;

ITO GLASS;

EID: 77950851971 PISSN: 00214922 EISSN: 13474065 Source Type: Journal
DOI: 10.1143/JJAP.49.025501 Document Type: Article

Times cited : (6)

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