A manufacturable, high power RF Gallium Nitride (GaN) technology portfolio with 65V operation and enhanced linearity

2011 IEEE International Conference on Microwaves, Communications, Antennas and Electronic Systems, COMCAS 2011

Volumn , Issue , 2011, Pages

  Shealy, J B ^a   Vetury, R ^a   Trabert, B ^a   Runton, D ^a  

^a RF MICRO DEVICES   (United States)

Author keywords

GaN HEMT; high efficiency; high voltage; intermodulation distortion; power amplifier

Indexed keywords

GAN HEMTS; HIGH VOLTAGE; HIGH-POWER; LINEAR TECHNOLOGIES; OUTPUT POWER; RELIABLE OPERATION; RF TECHNOLOGY; RF-POWER; TECHNOLOGY PORTFOLIOS;

ANTENNAS; ELECTRONICS ENGINEERING; INTERMODULATION; INTERMODULATION DISTORTION; POWER AMPLIFIERS; RADIO WAVES; TECHNOLOGY;

GALLIUM NITRIDE;

EID: 84855784858     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/COMCAS.2011.6105956     Document Type: Conference Paper

References (11)

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