100 W GaN HEMT power amplifier module with > 60% efficiency over 100-1000 MHz bandwidth

IEEE MTT-S International Microwave Symposium Digest

Volumn , Issue , 2010, Pages 940-943

  Krishnamurthy, K ^a   Driver, T ^a   Vetury, R ^a   Martin, J ^a  

^a RF MICRO DEVICES   (United States)

Author keywords

Broadband amplifiers; Gallium Nitride (GaN); High electron mobility transistors (HEMTs); Power amplifiers

Indexed keywords

DRAIN EFFICIENCY; DRAIN VOLTAGE; GAAS; GAN HEMTS; INTEGRATED PASSIVES; LOW LOSS; MULTIBAND; OUTPUT POWER; POWER AMPLIFIER MODULE; PUBLIC MOBILE RADIOS; SIC DEVICES;

BANDWIDTH; BROADBAND AMPLIFIERS; GALLIUM ALLOYS; GALLIUM NITRIDE; POWER AMPLIFIERS; SILICON CARBIDE;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 77957766979     PISSN: 0149645X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/MWSYM.2010.5518242     Document Type: Conference Paper

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