A 65 % drain efficiency GaN HEMT with 200 W peak power for 20 V to 65 V envelope tracking base station amplifier

IEEE MTT-S International Microwave Symposium Digest

Volumn , Issue , 2011, Pages

  Yamaki, Fumikazu ^a   Inoue, Kazutaka ^a   Ui, Norihiko ^b   Kawano, Akihiro ^b   Sano, Seigo ^a  

^a SUMITOMO ELECTRIC INDUSTRIES LTD   (Japan)

^b Sumitomo Electric Device Innovations USA   (Japan)

Author keywords

Cds; envelope tracking; GaN HEMT; high efficiency; power amplifier

Indexed keywords

AVERAGE POWER EFFICIENCY; BASE-STATION AMPLIFIERS; BREAK DOWN VOLTAGE; CDS; DRAIN BIAS; DRAIN EFFICIENCY; DRAIN VOLTAGE; ENVELOPE TRACKING; GAN HEMT; GAN HEMTS; GAN HIGH ELECTRON MOBILITY TRANSISTORS; GATE PERIPHERY; HIGH EFFICIENCY; HIGH TEMPERATURE OPERATING LIVES; PEAK POWER; SATURATED CURRENT;

BASE STATIONS; DRAIN CURRENT; EFFICIENCY; ELECTRON MOBILITY; GALLIUM NITRIDE; POWER AMPLIFIERS;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 80052310353     PISSN: 0149645X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/MWSYM.2011.5972654     Document Type: Conference Paper

References (9)

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