Non resonant response to terahertz radiation by submicron CMOS transistors

IEICE Transactions on Electronics

Volumn E89-C, Issue 7, 2006, Pages 993-998

  Meziani, Yahya Moubarak ^a,b   Łusakowski, Jerzy ^b,c   Dyakonova, Nina ^b   Knap, Wojciech ^b   Seliuta, Dalius ^d   Sirmulis, Edmundas ^d   Devenson, Jan ^d   Valusis, Gintaras ^d   Boeuf, Frédéric ^e   Skotnicki, Thomas ^e  

^a TOHOKU UNIVERSITY   (Japan)

^b UNIVERSITÉ MONTPELLIER 2   (France)

^c UNIVERSITY OF WARSAW   (Poland)

^d CENTER FOR PHYSICAL SCIENCES AND TECHNOLOGY   (Lithuania)

^e STMICROELECTRONICS   (France)

Author keywords

CMOS; Magnetoresistance mobility; Plasma instability; Plasma oscillations; Terahertz radiation

Indexed keywords

CMOS INTEGRATED CIRCUITS; PLASMA OSCILLATIONS; PLASMA STABILITY; RADIATION EFFECTS; THRESHOLD VOLTAGE;

MAGNETORESISTANCE MOBILITY; NON RESONANT DETECTION; SCALE DEVICES; TERAHERTZ RADIATIONS;

FIELD EFFECT TRANSISTORS;

EID: 33747889275     PISSN: 09168524     EISSN: 17451353     Source Type: Journal    
DOI: 10.1093/ietele/e89-c.7.993     Document Type: Conference Paper

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