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Materials Research Bulletin

Volumn 47, Issue 2, 2012, Pages 253-256

Epitaxial growth of SnO 2 films on 6H-SiC (0 0 0 1) by MOCVD

(5) Zhu, Zhen a Ma, Jin a Luan, Caina a Mi, Wei a Lv, Yu a

a SHANDONG UNIVERSITY (China)

Author keywords

A. Oxides; A. Thin films; B. Epitaxial growth; D. Semiconductivity

Indexed keywords

GROWTH MODELS; IN-PLANE ORIENTATION; SEMICONDUCTIVITY; SIC(0 0 0 1); STRUCTURE ANALYSIS; SUBSTRATE TEMPERATURE; TEMPERATURE RANGE; TETRAGONAL RUTILE STRUCTURE;

CARRIER CONCENTRATION; EPITAXIAL GROWTH; METALLORGANIC CHEMICAL VAPOR DEPOSITION; OXIDE MINERALS; SILICON CARBIDE; SUBSTRATES; X RAY DIFFRACTION ANALYSIS;

EPITAXIAL FILMS;

EID: 84855652836 PISSN: 00255408 EISSN: None Source Type: Journal
DOI: 10.1016/j.materresbull.2011.11.034 Document Type: Article

Times cited : (9)

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