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Volumn 9, Issue 3, 2000, Pages 452-455
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Microstructural analysis of III-V nitrides grown on 6H-SiC by metal-organic vapour phase epitaxy (MOVPE)
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Author keywords
[No Author keywords available]
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Indexed keywords
COALESCENCE;
CRYSTAL GROWTH;
CRYSTAL MICROSTRUCTURE;
METALLORGANIC VAPOR PHASE EPITAXY;
NUCLEATION;
SEMICONDUCTING ALUMINUM COMPOUNDS;
SEMICONDUCTING GALLIUM COMPOUNDS;
SILICON CARBIDE;
ALUMINUM GALLIUM NITRIDE;
GALLIUM NITRIDE;
NITRIDES;
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EID: 0033746723
PISSN: 09259635
EISSN: None
Source Type: Journal
DOI: 10.1016/S0925-9635(99)00280-0 Document Type: Article |
Times cited : (5)
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References (13)
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