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Volumn 9, Issue 3, 2000, Pages 452-455

Microstructural analysis of III-V nitrides grown on 6H-SiC by metal-organic vapour phase epitaxy (MOVPE)

Author keywords

[No Author keywords available]

Indexed keywords

COALESCENCE; CRYSTAL GROWTH; CRYSTAL MICROSTRUCTURE; METALLORGANIC VAPOR PHASE EPITAXY; NUCLEATION; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM COMPOUNDS; SILICON CARBIDE;

EID: 0033746723     PISSN: 09259635     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0925-9635(99)00280-0     Document Type: Article
Times cited : (5)

References (13)


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.