Epitaxial growth of transparent tin oxide films on (0 0 0 1) sapphire by pulsed laser deposition

Materials Research Bulletin

Volumn 44, Issue 1, 2009, Pages 6-10

  Tien, L C ^a,b   Norton, D P ^a   Budai, J D ^c  

^a J Crayton Pruitt Family Department of Biomedical Engineering   (United States)

^b NATIONAL DONG HWA UNIVERSITY   (Taiwan)

^c OAK RIDGE NATIONAL LABORATORY   (United States)

Author keywords

A. Oxides; A. Thin films; B. Laser deposition

Indexed keywords

CARRIER CONCENTRATION; CONCENTRATION (PROCESS); CORUNDUM; DEPOSITION; EPITAXIAL FILMS; EPITAXIAL GROWTH; GRAIN GROWTH; GROWTH TEMPERATURE; LASERS; MOLECULAR BEAM EPITAXY; OXIDE MINERALS; OXYGEN; OXYGEN VACANCIES; PULSED LASER APPLICATIONS; PULSED LASER DEPOSITION; SAPPHIRE; SULFUR COMPOUNDS; SURFACE ROUGHNESS; THICK FILMS; TIN; TITANIUM COMPOUNDS; TITANIUM OXIDES; X RAY DIFFRACTION ANALYSIS;

A. OXIDES; A. THIN FILMS; B. LASER DEPOSITION; COLUMNAR GRAINS; EPITAXIAL ORIENTATIONS; HIGH TEMPERATURES; LOWER DENSITIES; PULSED LASERS; RUTILE STRUCTURES; TIN OXIDE FILMS;

OXIDE FILMS;

EID: 56249112991     PISSN: 00255408     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.materresbull.2008.09.010     Document Type: Article

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