CVD of epitaxial SnO2 films by the SnI4O2 precursor combination

Chemical Vapor Deposition

Volumn 10, Issue 2, 2004, Pages 77-82

  Sundqvist, Jonas ^a   Ottosson, Mikael ^a   Hårsta, Anders ^a  

^a UPPSALA UNIVERSITY   (Sweden)

Author keywords

Al2O3 substrates; Epitaxy; Tin dioxide thin films; Tin tetraiodide; XRD

Indexed keywords

ALUMINA; CHEMICAL VAPOR DEPOSITION; CRYSTAL ORIENTATION; EPITAXIAL GROWTH; HIGH TEMPERATURE OPERATIONS; IODINE; MASS TRANSFER; REACTION KINETICS; SUBSTRATES; SURFACES; TITANIUM OXIDES; X RAY PHOTOELECTRON SPECTROSCOPY;

IN PLANE ORIENTATION RELATIONSHIP; IODINE CONTAMINATION; SURFACE KINETICS; TIN DIOXIDE THIN FILMS;

THIN FILMS;

EID: 1942422622     PISSN: 09481907     EISSN: None     Source Type: Journal    
DOI: 10.1002/cvde.200306279     Document Type: Article

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