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Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films

Volumn 30, Issue 1, 2012, Pages

Growth characteristics, material properties, and optical properties of zinc oxysulfide films deposited by atomic layer deposition

(5) Bakke, Jonathan R a Tanskanen, Jukka T a,b Hägglund, Carl a Pakkanen, Tapani A b Bent, Stacey F a

a Stanford University (United States)

b UNIVERSITY OF EASTERN FINLAND (Finland)

Author keywords

[No Author keywords available]

Indexed keywords

ALD GROWTH; BANDGAP BOWING; CRYSTALLINITIES; DEPOSITED FILMS; DIMETHYLZINC; GROWTH CHARACTERISTIC; MATERIAL PROPERTY; NARROW BAND GAP; OPTICAL CHARACTERISTICS; TERNARY FILM; THIN FILM PHOTOVOLTAICS; WIDE-BAND-GAP SEMICONDUCTOR; XRD PATTERNS; ZN(O ,S); ZNO;

ATOMIC LAYER DEPOSITION; ATOMIC SPECTROSCOPY; CRYSTAL STRUCTURE; DEPOSITION; ENERGY GAP; MATERIALS PROPERTIES; OPTICAL CONSTANTS; OPTICAL PROPERTIES; SEMICONDUCTOR GROWTH; SPECTROSCOPIC ELLIPSOMETRY; X RAY DIFFRACTION; X RAY PHOTOELECTRON SPECTROSCOPY; ZINC; ZINC OXIDE; ZINC SULFIDE;

FILM GROWTH;

EID: 84855592268 PISSN: 07342101 EISSN: None Source Type: Journal
DOI: 10.1116/1.3664758 Document Type: Article

Times cited : (46)

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