Conductivity modification of ZnO film by low energy Fe 10+ ion implantation

Applied Surface Science

Volumn 258, Issue 7, 2012, Pages 2237-2245

  Kumar, Ashutosh ^a   Krishna, J B M ^b   Das, Dipankar ^b   Keshri, Sunita ^a  

^a BIRLA INSTITUTE OF TECHNOLOGY   (India)

^b UGC DAE Consortium of Scientific Research   (India)

Author keywords

Hall measurement; Ion implantation; p type ZnO; Photoluminescence

Indexed keywords

ENERGY GAP; II-VI SEMICONDUCTORS; ION IMPLANTATION; IONS; METALLIC FILMS; PHOTOLUMINESCENCE; SEMICONDUCTING FILMS; ULTRAVIOLET VISIBLE SPECTROSCOPY; ZINC OXIDE;

DC RESISTIVITY; HALL MEASUREMENTS; IMPLANTED SAMPLES; N-TYPE CONDUCTIVITY; P TYPE CONDUCTIVITY; P TYPE ZNO; TEMPERATURE RANGE; UV-VIS SPECTROSCOPY;

IRON COMPOUNDS;

EID: 84855559739     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.apsusc.2011.09.015     Document Type: Article

References (51)

1. V. Srikant, and D.R. Clarke J. Appl. Phys. 83 1998 10
2. C. Zhang, X. Li, J. Bian, W. Yu, and X. Gao Surf. Coat. Technol. 198 2005 253 256
3. Y. Cao, L. Miao, S. Tanemura, M. Tanemura, Y. Kuno, and Yasuhiko Appl. Phys. Lett. 88 2006 251116
4. K.-K. Kim, H.-S. Kim, D.-K. Hwang, J.-H. Lim, and S.-J. Park Appl. Phys. Lett. 83 2003 63
5. Y.W. Heo, Y.W. Kwon, Y. Li, S.J. Pearton, and D.P. Norton Appl. Phys. Lett. 84 2004 3474
6. G. Yang, L.Y. Ping, L.J. Qiang, Z. Sheng Li, M. Zeng-Xia, and D.U. Xiao-Long Chin. Phys. Lett. 27 6 2010 067203
7. E. Przezdziecka, E. Kaminska, K.P. Korona, E. Dynowska, W. Dobrowolski, R. Jakieła, Ł. Kłopotowski, and J. Kossut Semicond. Sci. Technol. 22 2007 10 14
8. G. Braunstein, A. Muraviev, H. Saxena, N. Dhere, V. Richter, and R. Kalish Appl. Phys. Lett. 87 2005 192103
9. E.-J. Yun, J.W. Jung, and B. Cheol Lee J. Alloys Compd. 496 2010 543 547
10. S. Zhou, K. Potzger, G. Qingyu Xu, M. Talut, W. Lorenz, M. Skorupa, J. Helm, M. Fassbender, and H. Grundmann Schmidt Vacuum 83 2009 S13 S19
11. K. potzger, S. Zhou, H. Reuther, A. Mucklich, F. Eichhorn, N. Schell, W. Skorupa, M. Helm, J. Fassbender, T. Herrmonnsdorfer, and T.P. Papageorgiou Appl. Phys. Lett. 88 2006 052508
12. S. Zhou, K. Potzger, G. Talut, H. Reuther, J. von Borany, R. Grötzschel, W. Skorupa, M. Helm, J. Fassbender, N. Volbers, M. Lorenz, and T. Herrmannsdörfer J. Appl. Phys. 103 2008 023902
13. K. Potzger, S. Zhou, H. Reuther, K. Kuepper, G. Talut, M. Helm, J. Fassbender, and J.D. Denlinger Appl. Phys. Lett. 91 2007 062107
14. B. Zhang, Q.H. Li, L.Q. Shi, H.S. Cheng, and J.Z. Wang Nucl. Instrum. Methods B 266 2008 4891 4895
15. S. O'Brien, L.H.K. Koh, and G.M. Crean Thin Solid Films 516 2008 1391 1395
16. H. Li, J. Wang, H. Liu, H. Zhang, and X. Li J. Cryst. Growth 275 2005 943
17. D. Ruzmetov, D. Heiman, B.B. Clafin, V. Narayanamurti, and S. Ramanthan Phys. Rev. B 79 2009 153107
18. J.F. Ziegler Nucl. Instrum. Methods B 219-220 2004 1027
19. A.K. Mishra, and D. Das Mater. Sci. Eng. B 171 2010 5 10
20. X.C. Wang, W.B. Mi, and D.F. Kuang Appl. Surf. Sci. 256 2010 1930 1935
21. U.Ya. Ozgur, I. Alivov, C. Liu, A. Teke, M.A. Reshchikov, S. Dogan, V. Avrutin, S.J. Cho, and H. Morkoc J. Appl. Phys. 98 2005 041301
22. M. Scepanovic, M. Grujic-Brojcin, K. Vojisavljevic, S. Bernik, and T. Sreckovic J. Raman Spectrosc. 41 2010 914 921
23. H. Li, J.P. Sang, F. Mei, F. Ren, L. Zhang, and C. Liu Appl. Surf. Sci. 253 2007 8524 8529
24. X. Zhu, H. Wu, Z. Yuan, J. Kong, and W. Shen J. Raman Spectrosc. 40 2009 2155 2161
25. T.C. Damen, S.P.S. Porto, and B. Tell Phys. Rev. 142 1966 570
26. B. Zhang, S. Zhou, H. Wang, and Z. Du Chin. Sci. Bull. 53 2008 1639 1643
27. Y. Zhang, L. Wu, H. Li, J. Xu, L. Han, B. Wang, Z. Tuo, and E. Xie J. Alloys Compd. 473 2009 319 322
28. C.A. Arguello, D.L. Rousseau, and S.P.S. Porto Phys. Rev. 181 1969 1351
29. S.-S. Lo, D. Huang, C.-H. Tu, and D.-J. Jan J. Raman Spectrosc. 40 2009 1694 1697
30. F. Urbach Phys. Rev. 92 1953 1324
31. R.B. Bylsma, W.M. Becker, J. Kossut, U. Debska, and D. Yoder-Short Phys. Rev. B 33 1986 8207
32. W. Cheng, and X. Ma J. Phys. Conf. Ser. 152 2009 012039
33. J. Diouri, J.P. Lascaray, and M. El Amrani Phys. Rev. B 31 1985 7995
34. K. Ando, H. Saito, Z. Jin, T. Fukumura, M. Kawasaki, Y. Matsumoto, and H. Koinuma Appl. Phys. Lett. 78 2001 2700
35. A.K. Mishra, S.K. Chaudhuri, S. Mukherjee, A. Priyam, A. Saha, and D. Das J. Appl. Phys. 102 2007 103514
36. X. Teng, H. Fan, S. Pan, C. Ye, and G. Li Mater. Lett. 61 2007 201 204
37. S.B. Zhang, S.H. Wei, and A. Zunger Phys. Rev. B 63 2001 075205
38. H. Liu, X. Zhang, Y.X. Luyan Li, K.H. Wang, Z.Q. Gao, R.K. Li, S.P. Zheng, B. Ringer, X.X. Zhang, and Zhang Appl. Phys. Lett. 91 2007 072511
39. D.C. Look Semicond. Sci. Technol. 20 2005 S55 S61
40. L.J. van der Pauw Philips Res. Rep. 13 1958 1
41. N.F. Mott J. Non-Cryst. Solids 1 1968 1
42. M. Foygel, R.D. Morris, and A.G. Petukhov Phys. Rev. B 67 2003 134205
43. T. Manago, N. Nisizako, S. Ishida, H. Geka, and I. Shibasaki Journal of Crystal Growth 311 2009 1711 1714
44. A. Debernardi, and M. Fanciulli Physical Review B 84 2011 024415
45. M. Sawicki, T. Dietl, J. Kossut, J. Igalson, T. Wojtowicz, and W. Plesiewicz Phys. Rev. Lett. 56 1986 508
46. J.K. Furdyna J. Appl. Phys. 64 1988 R29
47. J.H. Kim, H. Kim, D. Kim, Y.E. Ihm, and W.K. Choo Physica B 327 2003 304
48. Q. Xu, L. Hartman, H. Schmidt, H. Hochmuth, M. Lorenz, R. Schmidt-Grund, C. Sturn, D. Spemann, and M. Grundmann Phys. Rev. B 73 2006 205342
49. T. Dietl, and J. Spalek Phys. Rev. B 28 1983 1548
50. F.G. Pikus, and G.E. Pikus Solid State Commun. 100 1996 95
51. Y. Shapira, and R.L. Kautz Phys. Rev. B 10 1974 4781