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Journal of Crystal Growth

Volumn 311, Issue 7, 2009, Pages 1711-1714

Hall effect and magnetoresistance analysis by electron-hole coexisting model in AlInSb/InAsSb quantum wells

(5) Manago, T a Nisizako, N a Ishida, S a Geka, H b Shibasaki, I b

a TOKYO UNIVERSITY OF SCIENCE (Japan)

b ASAHI KASEI CORPORATION (Japan)

Author keywords

A1. Characterization; A3. Molecular beam epitaxy; B2. InAs; B2. InAsSb; B2. InSb; B2. Semiconducting indium compounds

Indexed keywords

ATOMS; CRYSTAL GROWTH; ELECTRIC RESISTANCE; ELECTRONS; HALL EFFECT; INDIUM ARSENIDE; MAGNETIC FIELD EFFECTS; MAGNETOELECTRONICS; MAGNETORESISTANCE; MOLECULAR BEAM EPITAXY; MOLECULAR BEAMS; MOLECULAR DYNAMICS; SEMICONDUCTING INDIUM; SEMICONDUCTOR QUANTUM WELLS; SEMICONDUCTOR QUANTUM WIRES; TRANSPORT PROPERTIES; WELLS;

A1. CHARACTERIZATION; A3. MOLECULAR BEAM EPITAXY; B2. INAS; B2. INASSB; B2. INSB; B2. SEMICONDUCTING INDIUM COMPOUNDS;

SEMICONDUCTING INDIUM COMPOUNDS;

EID: 63349083036 PISSN: 00220248 EISSN: None Source Type: Journal
DOI: 10.1016/j.jcrysgro.2008.11.082 Document Type: Article

Times cited : (9)

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