Characterization of defects in ZnO nanocrystals: Photoluminescence and positron annihilation spectroscopic studies

Journal of Applied Physics

Volumn 102, Issue 10, 2007, Pages

  Mishra, A K ^a   Chaudhuri, S K ^a   Mukherjee, S ^a   Priyam, A ^a   Saha, A ^a   Das, D ^a  

^a UGC DAE CONSORTIUM FOR SCIENTIFIC RESEARCH   (India)

Author keywords

[No Author keywords available]

Indexed keywords

HEAT TREATMENT; NANOCRYSTALS; PHOTOLUMINESCENCE; POSITRON ANNIHILATION SPECTROSCOPY; VALENCE BANDS; X RAY DIFFRACTION ANALYSIS;

ELECTRONIC TRANSITIONS; SINGLE-PHASE WURTZITE STRUCTURE FORMATION.; VIOLET EMISSION; ZINC VACANCIES;

ZINC OXIDE;

EID: 36649026928     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2817598     Document Type: Article

References (22)

1. M. H. Huang, S. Mao, H. Feick, H. Yan, Y. Wu, H. Kind, E. Weber, R. Russo, and P. Yang, Science 292, 1897 (2001).
2. S. Ghosh, V. Sih, W. H. Lau, D. D. Awschalam, S.-Y. Bae, S. Wang, S. Vaidya, and G. Chapline, Appl. Phys. Lett. 86, 232507 (2005).
3. F. C. M. Van de Pol, Ceram. Bull. 69, 1959 (1990).
4. V. A. Fonoberov, K. A. Alim, A. A. Balandin, F. Xiu, and J. Liu, Phys. Rev. B 73, 165317 (2006).
5. Y. M. Sun, Ph.D. thesis, University of Science and Technology of China, 2000.
6. A. F. Kohan, G. Ceder, D. Morgan, and Chris G. Van de Walle, Phys. Rev. B 61, 15019 (2000).
7. K. Vaheusden, C. H. Seager, W. L. Warren, D. R. Tallant, and J. A. Voigt, Appl. Phys. Lett. 68, 403 (1996).
8. K. Vanheusden, W. L. Warren, C. H. Seager, D. R. Tallant, J. A. Voigt, and B. E. Gnada, J. Appl. Phys. 79, 7983 (1996).
9. C. M. Mo, Y. H. Li, Y. S. Liu, Y. Zhang, and L. D. Zhang, J. Appl. Phys. 83, 4389 (1998).
10. F. K. Shan, G. X. Liu, W. J. Lee, G. H. Lee, I. S. Kim, and B. C. Shin, Appl. Phys. Lett. 86, 221910 (2005).
11. B. X. Lin, Z. X. Fu, and Y. B. Jia, Appl. Phys. Lett. 79, 943 (2001).
12. X. Wei, B. Man, C. Xue, C. Chen, and M. Liu, Jpn. J. Appl. Phys., Part 1 45, 8586 (2006).
13. H. Zeng, W. Cai, J. Hu, G. Duan, P. Liu, and Y. Li, Appl. Phys. Lett. 88, 171910 (2006).
14. R. Krause-Rehberg and H. S. Leipner, Positron Annihilation in Semiconductors, Defect Studies, Springer Series in Solid-State Sciences Vol. 127 (Springer, Berlin, 1999).
15. P. Kirkegaard and M. Eldrup, Comput. Phys. Commun. 3, 240 (1972).
16. J. R. Lackowicz, Principles of Fluorescence Spectroscopy (Kluwer AcademicPlenum, New York, 1999). p. 53.
17. S. Sapra and D. D. Sarma, Chemistry of Nanomaterials (Wiley-VCH, New York, 2004), p. 371.
18. Z. Q. Chen, S. Yamamoto, M. Maekawa, A. Kawasuso, X. L. Yuan, and T. Sekiguchi, J. Appl. Phys. 94, 4807 (2003).
19. H. S. Domingos, J. M. Carlsson, P. D. Bristowe, and B. Hellsing, Interface Sci. 12, 227 (2004).
20. M. S. Ramanachalam, A. Rohtagi, J. P. Schaffer, and T. K. Gupta, J. Appl. Phys. 69, 8380 (1991).
21. F. Tuomisto, V. Ranki, K. Saarinen, and D. C. Look, Phys. Rev. Lett. 91, 205502 (2003).
22. X. Y. Qin, J. S. Zhu, L. D. Zhang, and X. Y. Zhou, J. Phys.: Condens. Matter 10, 3075 (1998).