XRD and XPS characterisation of transition metal silicide thin films

Surface Science

Volumn 606, Issue 3-4, 2012, Pages 329-336

  Tam, P L ^a   Cao, Y ^a   Nyborg, L ^a  

^a CHALMERS UNIVERSITY OF TECHNOLOGY   (Sweden)

Author keywords

Pretorius' effective heat of formation (EHF) model; Thin films; Transition metal silicide; X ray diffraction (XRD); X ray photoelectron spectroscopy (XPS)

Indexed keywords

AUGER PARAMETERS; BINDING ENERGY SHIFTS; CRYSTALLINE STRUCTURE; EFFECTIVE HEAT OF FORMATION; FINAL-STATE EFFECTS; INITIAL-STATE EFFECTS; NI-SI SYSTEM; PHASE FORMATION SEQUENCE; SI WAFER; SINGLE-PHASE THIN FILMS; SURFACE CHEMICALS; TRANSITION METAL SILICIDE; TRANSITION METAL SILICIDES; WAGNER PLOTS; X-RAY DIFFRACTION (XRD); X-RAY PHOTOELECTRON SPECTROSCOPY (XPS); XRD;

BINDING ENERGY; CHEMICAL SHIFT; CHROMIUM; DEPOSITION; PHOTONS; SILICIDES; SILICON; SILICON WAFERS; THERMOCHEMISTRY; THIN FILMS; TITANIUM COMPOUNDS; TRANSITION METALS; VAPOR DEPOSITION; X RAY DIFFRACTION; X RAY PHOTOELECTRON SPECTROSCOPY;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 84855425442     PISSN: 00396028     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.susc.2011.10.015     Document Type: Article

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