Noble gas ion effects on the XPS valence band spectra of silicon

Applied Surface Science

Volumn 222, Issue 1-4, 2004, Pages 13-16

  Walker, Elaine ^a   Lund, Christopher P ^a   Jennings, Philip ^a   Cornish, John C L ^a   Klauber, Craig ^b   Hefter, Glenn ^a  

^a MURDOCH UNIVERSITY   (Australia)

^b CSIRO   (Australia)

Author keywords

Amorphous silicon; Ion bombardment; Lineshape analysis; Noble gases; XPS valence band

Indexed keywords

BINDING ENERGY; CRYSTALLINE MATERIALS; INERT GASES; ION BOMBARDMENT; KINETIC ENERGY; MOLECULAR ORIENTATION; PHOTOEMISSION; SURFACE CHEMISTRY; X RAY PHOTOELECTRON SPECTROSCOPY;

DECONVOLUTION; LINESHAPE BROADENING; PHOTOELECTRON VALENCE BAND;

AMORPHOUS SILICON;

EID: 0346753492     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.apsusc.2003.08.018     Document Type: Article

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