Effect of Al doping on the microstructural, optical and electrical properties of ZnO films

Superlattices and Microstructures

Volumn 51, Issue 1, 2012, Pages 149-162

  Aghdaee, S R ^a   Soleimanian, V ^a   Tayebi, B ^a  

^a IRAN UNIVERSITY OF SCIENCE AND TECHNOLOGY   (Iran)

Author keywords

Dislocation density; Semiconducting materials; Sol gel method; X ray diffraction; Zinc oxide

Indexed keywords

AL-DOPED ZNO; AL-DOPING; ALUMINUM CONTENTS; DISLOCATION DENSITIES; DOPING CONCENTRATION; GLASS SUBSTRATES; MICRO-STRUCTURAL; OPTICAL AND ELECTRICAL PROPERTIES; PROFILE FITTING; SEMICONDUCTING MATERIALS; SOL-GEL METHODS; VOLUME-WEIGHTED AVERAGES; X-RAY DIFFRACTION LINE BROADENING; ZNO FILMS;

ACTIVATION ENERGY; ELECTRIC PROPERTIES; ENERGY GAP; GELS; METALLIC FILMS; MICROSTRUCTURE; OPTICAL CORRELATION; SEMICONDUCTING FILMS; SOL-GEL PROCESS; SOL-GELS; SOLS; SPIN GLASS; SUBSTRATES; X RAY DIFFRACTION; X RAY DIFFRACTION ANALYSIS; ZINC OXIDE;

SEMICONDUCTOR DOPING;

EID: 84855224577     PISSN: 07496036     EISSN: 10963677     Source Type: Journal    
DOI: 10.1016/j.spmi.2011.11.009     Document Type: Article

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