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Applied Physics Letters

Volumn 96, Issue 13, 2010, Pages

Violet electroluminescence from p-GaN thin film/n-GaN nanowire homojunction

(5) Ahn, Jaehui a Mastro, Michael A b Hite, Jennifer b Eddy, Charles R b Kim, Jihyun a

a Korea University (South Korea)

b NAVAL RESEARCH LABORATORY (United States)

Author keywords

[No Author keywords available]

Indexed keywords

DIELECTROPHORETIC FORCES; GAN NANOWIRES; GAN THIN FILMS; HOMOJUNCTION; MICRO WIRE; OHMIC METALS; P-N HOMOJUNCTIONS; P-TYPE GAN; PRECISE POSITIONING; RECTIFYING BEHAVIORS; REVERSE BIAS; SIMULATION RESULT;

DISTILLATION; ELECTRIC FIELDS; ELECTRIC WIRE; ELECTROLUMINESCENCE; GALLIUM ALLOYS; GALLIUM NITRIDE; NANOWIRES; THIN FILMS;

CURRENT VOLTAGE CHARACTERISTICS;

EID: 77950491701 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.3377005 Document Type: Article

Times cited : (7)

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