Epitaxial growth of three-dimensionally architectured optoelectronic devices

Nature Materials

Volumn 10, Issue 9, 2011, Pages 676-681

  Nelson, Erik C ^a   Dias, Neville L ^a   Bassett, Kevin P ^a   Dunham, Simon N ^a   Verma, Varun ^a   Miyake, Masao ^b   Wiltzius, Pierre ^c   Rogers, John A ^a   Coleman, James J ^a   Li, Xiuling ^a   Braun, Paul V ^a  

^a UNIVERSITY OF ILLINOIS AT URBANA CHAMPAIGN   (United States)

^b KYOTO UNIVERSITY   (Japan)

^c UNIVERSITY OF CALIFORNIA   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL STRUCTURE; EPITAXIAL GROWTH; OPTOELECTRONIC DEVICES; PHOTONIC CRYSTALS; REFRACTION;

3D PHOTONIC CRYSTALS; COMPLEX THREE DIMENSIONAL STRUCTURES; LOW-LOSS WAVEGUIDES; MICROSCOPIC LENGTH SCALE; MULTIPLE DIMENSIONS; NEGATIVE REFRACTIONS; OPTOELECTRONIC PROPERTIES; THREE DIMENSIONAL (3D) PHOTONIC CRYSTALS;

LIGHT EMITTING DIODES;

EID: 80052069700     PISSN: 14761122     EISSN: 14764660     Source Type: Journal    
DOI: 10.1038/nmat3071     Document Type: Article

References (30)

1. John, S. Strong localization of photons in certain disordered dielectric superlattices. Phys. Rev. Lett. 58, 2486-2489 (1987).
2. Yablonovitch, E. Inhibited spontaneous emission in solid-state physics and electronics. Phys. Rev. Lett. 58, 2059-2062 (1987).
3. Lousse, V. & Fan, S. Waveguides in inverted opal photonic crystals. Opt. Express 14, 868-878 (2006).
4. Johnson, S. G., Villeneuve, P. R., Shanhui, F. & Joannopoulos, J. D. Linear waveguides in photonic-crystal slabs. Phys. Rev. B 62, 8212-8222 (2000).
5. Mekis, A. et al. High transmission through sharp bends in photonic crystal waveguides. Phys. Rev. Lett. 77, 3787-3790 (1996).
6. Dong-Ho, K. et al. Enhanced light extraction from GaN-based light-emitting diodes with holographically generated two-dimensional photonic crystal patterns. Appl. Phys. Lett. 87, 203508 (2005).
7. Yu, Z., Raman, A. & Fan, S. Fundamental limit of nanophotonic light trapping in solar cells. Proc. Natl Acad. Sci. USA 107, 17491-17496 (2010).
8. Green, M. A. Prospects for photovoltaic efficiency enhancement using low-dimensional structures. Nanotechnology 11, 401-405 (2000).
9. Zheludev, N. I. The road ahead for metamaterials. Science 328, 582-583 (2010).
10. Blanco, A. et al. Large-scale synthesis of a silicon photonic crystal with a complete three-dimensional bandgap near 1.5 micrometres. Nature 405, 437-440 (2000).
11. Braun, P. V. & Wiltzius, P. Electrochemically grown photonic crystals. Nature 402, 603-604 (1999).
12. Graugnard, E., Chawla, V., Lorang, D. & Summers, C. J. High filling fraction gallium phosphide inverse opals by atomic layer deposition. Appl. Phys. Lett. 89, 211102 (2006).
13. Shir, D. et al. Three dimensional silicon photonic crystals fabricated by two photon phase mask lithography. Appl. Phys. Lett. 94, 011101 (2009).
14. Takahashi, S. et al. Direct creation of three-dimensional photonic crystals by a top-down approach. Nature Mater. 8, 721-725 (2009).
15. Noda, S., Tomoda, K., Yamamoto, N. & Chutinan, A. Full three-dimensional photonic bandgap crystals at near-infrared wavelengths. Science 289, 604-606 (2000).
16. Aoki, K. et al. Microassembly of semiconductor three-dimensional photonic crystals. Nature Mater. 2, 117-121 (2003).
17. Subramania, G. et al. Emission modification of CdSe quantum dots by titanium dioxide visible logpile photonic crystal. Appl. Phys. Lett. 95, 151101 (2009).
18. Campbell, M., Sharp, D. N., Harrison, M. T., Denning, R. G. & Turberfield, A. J. Fabrication of photonic crystals for the visible spectrum by holographic lithography. Nature 404, 53-56 (2000).
19. Jeon, S. et al. Three-dimensional nanofabrication with rubber stamps and conformable photomasks. Adv. Mater. 16, 1369-1373 (2004).
20. Azoulay, R., Bouadma, N., Bouley, J. C. & Dugrand, L. Selective MOCVD epitaxy for optoelectronic devices. J. Cryst. Growth 55, 229-234 (1981).
21. Heinecke, H. et al. Selective growth of GaAs in the MOMBE and MOCVD systems. J. Cryst. Growth 77, 303-309 (1986).
22. Oh, H-J., Sugiyama, M., Nakano, Y. & Shimogaki, Y. Surface reaction kinetics in metalorganic vapor phase epitaxy of GaAs through analyses of growth rate profile in wide-gap selective-area growth. Jpn J. Appl. Phys. 1 42, 6284-6291 (2003).
23. Scholz, F. et al. Selective-area epitaxy of GaInAs using conventional and novel group-III precursors. J. Cryst. Growth 145, 242-248 (1994).
24. Stringfellow, G. B. Organometallic Vapor-Phase Epitaxy: Theory and Practice 2nd edn (Academic Press, 1999).
25. Sugiyama, M., Oh, H-J., Nakano, Y. & Shimogaki, Y. Polycrystals growth on dielectric masks during InP/GaAs selective MOVPE. J. Cryst. Growth 261, 411-418 (2004).
26. Poling, B. E., Prausnitz, J. M. & O'Connell, J. P. Properties of Gases and Liquids 5th edn (McGraw-Hill, 2000).
27. Stöber, W., Fink, A. & Bohn, E. Controlled growth of monodiperse silica spheres in micron size range. J. Colloid Interface Sci. 26, 62-69 (1968).
28. Jiang, P., Bertone, J. F., Hwang, K. S. & Colvin, V. L. Single-crystal colloidal multilayers of controlled thickness. Chem. Mater. 11, 2132-2140 (1999).
29. Ramanan, V., Nelson, E., Brzezinski, A., Braun, P. V. & Wiltzius, P. Three dimensional silicon-air photonic crystals with controlled defects using interference lithography. Appl. Phys. Lett. 92, 173304 (2008).
30. Chen, Y. C., Geddes, J. B., Lee, J. T., Braun, P. V. & Wiltzius, P. Holographically fabricated photonic crystals with large reflectance. Appl. Phys. Lett. 91, 241103 (2007).