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Volumn 6, Issue 1, 2011, Pages

Lateral homogeneity of the electronic properties in pristine and ion-irradiated graphene probed by scanning capacitance spectroscopy

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITANCE; CAPACITANCE MEASUREMENT; ELECTRONIC PROPERTIES; IONS; POINT DEFECTS; GRAPHENE; TRANSPORT PROPERTIES;

EID: 84255173393     PISSN: 19317573     EISSN: 1556276X     Source Type: Journal    
DOI: 10.1186/1556-276X-6-109     Document Type: Article
Times cited : (13)

References (22)
  • 2
    • 41849125958 scopus 로고    scopus 로고
    • Intrinsic and extrinsicperformance limits of graphene devices on SiO
    • Chen JH, Jang C, Xiao S, Ishigami M, Fuhrer MS: Intrinsic and extrinsic performance limits of graphene devices on SiO2,. Nat Nanotechnol 2008,3:206-209
    • (2008) Nat Nanotechnol , vol.3 , pp. 206-209
    • Chen, J.H.1    Jang, C.2    Xiao, S.3    Ishigami, M.4    Fuhrer, M.S.5
  • 5
    • 77957681630 scopus 로고    scopus 로고
    • Role ofgraphene/substrate interface on the local transport properties of thetwo-dimensional electron gas
    • Sonde S, Giannazzo F, Vecchio C, Yakimova R, Rimini E, Raineri V: Role ofgraphene/substrate interface on the local transport properties of thetwo-dimensional electron gas. Appl Phys Lett 2010, 97:132101.
    • (2010) Appl Phys Lett , vol.97 , pp. 132101
    • Sonde, S.1    Giannazzo, F.2    Vecchio, C.3    Yakimova, R.4    Rimini, E.5    Raineri, V.6
  • 7
    • 43449107662 scopus 로고    scopus 로고
    • Large-area ultrathin films of reducedgraphene oxide as a transparent and flexible electronic material
    • Eda G, Fanchini G, Chhowalla M: Large-area ultrathin films of reducedgraphene oxide as a transparent and flexible electronic material. NatNanotechnol 2008, 3:270
    • (2008) NatNanotechnol , vol.3 , pp. 270
    • Eda, G.1    Fanchini, G.2    Chhowalla, M.3
  • 8
    • 61849126831 scopus 로고    scopus 로고
    • Electric property evolutionof structurally defected multilayer graphene
    • Kim K, Park HJ, Woo BC, Kim KJ, Kim GT, Yun WS: Electric property evolutionof structurally defected multilayer graphene. Nano Lett 2008, 8:3092.
    • (2008) Nano Lett , vol.8 , pp. 3092
    • Kim, K.1    Park, H.J.2    Woo, B.C.3    Kim, K.J.4    Kim, G.T.5    Yun, W.S.6
  • 9
    • 58149483882 scopus 로고    scopus 로고
    • Modification of graphene properties dueto electron-beam irradiation
    • Teweldebrhan D, Balandin AA: Modification of graphene properties dueto electron-beam irradiation. Appl Phys Lett 2009, 94:013101.
    • (2009) Appl Phys Lett , vol.94 , pp. 013101
    • Teweldebrhan, D.1    Balandin, A.A.2
  • 12
    • 64549110349 scopus 로고    scopus 로고
    • Dielectric thickness dependenceof capacitive behavior in graphene deposited on silicon dioxide
    • Sonde S, Giannazzo F, Raineri V, Rimini E: Dielectric thickness dependenceof capacitive behavior in graphene deposited on silicon dioxide. J VacSci Technol B 2009, 27:868-873
    • (2009) J VacSci Technol B , vol.27 , pp. 868-873
    • Sonde, S.1    Giannazzo, F.2    Raineri, V.3    Rimini, E.4
  • 15
    • 61649090766 scopus 로고    scopus 로고
    • Screening Length and QuantumCapacitance in Graphene by Scanning Probe Microscopy
    • Giannazzo F, Sonde S, Raineri V, Rimini E: Screening Length and QuantumCapacitance in Graphene by Scanning Probe Microscopy. Nano Lett 2009, 9:23.
    • (2009) Nano Lett , vol.9 , pp. 23
    • Giannazzo, F.1    Sonde, S.2    Raineri, V.3    Rimini, E.4
  • 20
    • 73649110283 scopus 로고    scopus 로고
    • 2 probed by local mobility measurements
    • Giannazzo F, Sonde S, Raineri V, Rimini E: Irradiation damage in grapheneon SiO2 probed by local mobility measurements. Appl Phys Lett 2009,95:263109
    • (2009) Appl Phys Lett , vol.95 , pp. 263109
    • Giannazzo, F.1    Sonde, S.2    Raineri, V.3    Rimini, E.4
  • 21
    • 38849201768 scopus 로고    scopus 로고
    • Von Klitzing K,Yacobi A: Observation of electron-hole puddles in graphene using ascanning single-electron transistor
    • Martin J, Akerman N, Ulbricht G, Lohamann T, Smet JH, Von Klitzing K,Yacobi A: Observation of electron-hole puddles in graphene using ascanning single-electron transistor. Nat Phys 2008, 4:144
    • (2008) Nat Phys , vol.4 , pp. 144
    • Martin, J.1    Akerman, N.2    Ulbricht, G.3    Lohamann, T.4    Smet, J.H.5
  • 22
    • 36348943354 scopus 로고    scopus 로고
    • Electronic transport in graphene: Asemiclassical approach including midgap states
    • Stauber T, Peres NMR, Guinea F: Electronic transport in graphene: Asemiclassical approach including midgap states. Phys Rev B 2007,76:205423.
    • (2007) Phys Rev B , vol.76 , pp. 205423
    • Stauber, T.1    Peres, N.M.R.2    Guinea, F.3


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.