-
1
-
-
7444220645
-
Electric Field Effect in Atomically Thin CarbonFilms
-
Novoselov KS, Geim AK, Morozov SV, Jiang D, Zhang Y, Dubonos SV, Grigorieva IV, Firsov AA: Electric Field Effect in Atomically Thin CarbonFilms. Science 2004, 306:666-669
-
(2004)
Science
, vol.306
, pp. 666-669
-
-
Novoselov, K.S.1
Geim, A.K.2
Morozov, S.V.3
Jiang, D.4
Zhang, Y.5
Dubonos, S.V.6
Grigorieva, I.V.7
Firsov, A.A.8
-
2
-
-
41849125958
-
Intrinsic and extrinsicperformance limits of graphene devices on SiO
-
Chen JH, Jang C, Xiao S, Ishigami M, Fuhrer MS: Intrinsic and extrinsic performance limits of graphene devices on SiO2,. Nat Nanotechnol 2008,3:206-209
-
(2008)
Nat Nanotechnol
, vol.3
, pp. 206-209
-
-
Chen, J.H.1
Jang, C.2
Xiao, S.3
Ishigami, M.4
Fuhrer, M.S.5
-
3
-
-
43049170468
-
Ultrahigh electron mobility in suspended graphene
-
Bolotin KI, Sikes KJ, Jiang Z, Klima M, Fudenberg G, Hone J, Kim P, Stormer HL: Ultrahigh electron mobility in suspended graphene. Solid State Commun 2008, 146:351
-
(2008)
SolidState Commun
, vol.146
, pp. 351
-
-
Bolotin, K.I.1
Sikes, K.J.2
Jiang, Z.3
Klima, M.4
Fudenberg, G.5
Hone, J.6
Kim, P.7
Stormer, H.L.8
-
4
-
-
36749039718
-
Electronic Transport Properties of IndividualChemically Reduced Graphene Oxide Sheets
-
Gomez-Navarro C, Thomas Weitz R, Bittner AM, Scolari M, Mews A, Burghard M, Kern K: Electronic Transport Properties of IndividualChemically Reduced Graphene Oxide Sheets. Nanoletters 2007, 7:3499.
-
(2007)
Nanoletters
, vol.7
, pp. 3499
-
-
Gomez-Navarro, C.1
Thomas Weitz, R.2
Bittner, A.M.3
Scolari, M.4
Mews, A.5
Burghard, M.6
Kern, K.7
-
5
-
-
77957681630
-
Role ofgraphene/substrate interface on the local transport properties of thetwo-dimensional electron gas
-
Sonde S, Giannazzo F, Vecchio C, Yakimova R, Rimini E, Raineri V: Role ofgraphene/substrate interface on the local transport properties of thetwo-dimensional electron gas. Appl Phys Lett 2010, 97:132101.
-
(2010)
Appl Phys Lett
, vol.97
, pp. 132101
-
-
Sonde, S.1
Giannazzo, F.2
Vecchio, C.3
Yakimova, R.4
Rimini, E.5
Raineri, V.6
-
6
-
-
33744469329
-
Electronic Confinementand Coherence in Patterned Epitaxial Graphene
-
Berger C, Song Z, Li X, Wu X, Brown N, Naud C, Mayou D, Li T, Hass J, Marchenkov AN, Conrad EH, First PN, de Heer WA: Electronic Confinementand Coherence in Patterned Epitaxial Graphene. Science 2006, 312:1191.
-
(2006)
Science
, vol.312
, pp. 1191
-
-
Berger, C.1
Song, Z.2
Li, X.3
Wu, X.4
Brown, N.5
Naud, C.6
Mayou, D.7
Li, T.8
Hass, J.9
Marchenkov, A.N.10
Conrad, E.H.11
First, P.N.12
de Heer, W.A.13
-
7
-
-
43449107662
-
Large-area ultrathin films of reducedgraphene oxide as a transparent and flexible electronic material
-
Eda G, Fanchini G, Chhowalla M: Large-area ultrathin films of reducedgraphene oxide as a transparent and flexible electronic material. NatNanotechnol 2008, 3:270
-
(2008)
NatNanotechnol
, vol.3
, pp. 270
-
-
Eda, G.1
Fanchini, G.2
Chhowalla, M.3
-
8
-
-
61849126831
-
Electric property evolutionof structurally defected multilayer graphene
-
Kim K, Park HJ, Woo BC, Kim KJ, Kim GT, Yun WS: Electric property evolutionof structurally defected multilayer graphene. Nano Lett 2008, 8:3092.
-
(2008)
Nano Lett
, vol.8
, pp. 3092
-
-
Kim, K.1
Park, H.J.2
Woo, B.C.3
Kim, K.J.4
Kim, G.T.5
Yun, W.S.6
-
9
-
-
58149483882
-
Modification of graphene properties dueto electron-beam irradiation
-
Teweldebrhan D, Balandin AA: Modification of graphene properties dueto electron-beam irradiation. Appl Phys Lett 2009, 94:013101.
-
(2009)
Appl Phys Lett
, vol.94
, pp. 013101
-
-
Teweldebrhan, D.1
Balandin, A.A.2
-
10
-
-
67249162996
-
Defect Scattering inGraphene
-
Chen JH, Cullen WG, Jang C, Fuhrer MS, Williams ED: Defect Scattering inGraphene. Phys Rev Lett 2009, 102:236805
-
(2009)
Phys Rev Lett
, vol.102
, pp. 236805
-
-
Chen, J.H.1
Cullen, W.G.2
Jang, C.3
Fuhrer, M.S.4
Williams, E.D.5
-
11
-
-
59149091893
-
Controlof Graphene's Properties by Reversible Hydrogenation: Evidence forGraphane
-
Elias DC, Nair RR, Mohiuddin TMG, Morozov SV, Blake P, Halsall MP, Ferrari AC, Boukhvalov DW, Katsnelson MI, Geim AK, Novoselov KS: Controlof Graphene's Properties by Reversible Hydrogenation: Evidence forGraphane. Science 2009, 323:610
-
(2009)
Science
, vol.323
, pp. 610
-
-
Elias, D.C.1
Nair, R.R.2
Mohiuddin, T.M.G.3
Morozov, S.V.4
Blake, P.5
Halsall, M.P.6
Ferrari, A.C.7
Boukhvalov, D.W.8
Katsnelson, M.I.9
Geim, A.K.10
Novoselov, K.S.11
-
12
-
-
64549110349
-
Dielectric thickness dependenceof capacitive behavior in graphene deposited on silicon dioxide
-
Sonde S, Giannazzo F, Raineri V, Rimini E: Dielectric thickness dependenceof capacitive behavior in graphene deposited on silicon dioxide. J VacSci Technol B 2009, 27:868-873
-
(2009)
J VacSci Technol B
, vol.27
, pp. 868-873
-
-
Sonde, S.1
Giannazzo, F.2
Raineri, V.3
Rimini, E.4
-
13
-
-
77952559077
-
Optical, morphological and spectroscopiccharacterization of graphene on SiO
-
Giannazzo F, Sonde S, Raineri V, Patanè G, Compagnini G, Aliotta F,Ponterio R, Rimini E: Optical, morphological and spectroscopiccharacterization of graphene on SiO2. Phys Status Solidi C 2010, 7:1251
-
(2010)
Phys Status Solidi C
, vol.7
, pp. 1251
-
-
Giannazz, F.1
Sonde, S.2
Raineri, V.3
Pataǹ, G.4
Compagnin, G.5
Aliotta, F.6
Ponterio, R.7
Rimini, E.8
-
14
-
-
69849094763
-
Ion irradiationand defect formation in single layer graphene
-
Compagnini G, Giannazzo F, Sonde S, Raineri V, Rimini E: Ion irradiationand defect formation in single layer graphene. Carbon 2009, 47:3201
-
(2009)
Carbon
, vol.47
, pp. 3201
-
-
Compagnini, G.1
Giannazzo, F.2
Sonde, S.3
Raineri, V.4
Rimini, E.5
-
15
-
-
61649090766
-
Screening Length and QuantumCapacitance in Graphene by Scanning Probe Microscopy
-
Giannazzo F, Sonde S, Raineri V, Rimini E: Screening Length and QuantumCapacitance in Graphene by Scanning Probe Microscopy. Nano Lett 2009, 9:23.
-
(2009)
Nano Lett
, vol.9
, pp. 23
-
-
Giannazzo, F.1
Sonde, S.2
Raineri, V.3
Rimini, E.4
-
16
-
-
0142089013
-
Scanningcapacitance microscopy on ultranarrow doping profiles in Si
-
Giannazzo F, Goghero D, Raineri V, Mirabella S, Priolo F: Scanningcapacitance microscopy on ultranarrow doping profiles in Si. Appl PhysLett 2003, 83:2659-2661
-
(2003)
Appl PhysLett
, vol.83
, pp. 2659-2661
-
-
Giannazzo, F.1
Goghero, D.2
Raineri, V.3
Mirabella, S.4
Priolo, F.5
-
17
-
-
31544476316
-
Drift mobility inquantum nanostructures by scanning probe microscopy
-
Giannazzo F, Raineri V, Mirabella S, Impellizzeri G, Priolo F: Drift mobility inquantum nanostructures by scanning probe microscopy. Appl Phys Lett2006,88:043117
-
(2006)
Appl Phys Lett
, vol.88
, pp. 043117
-
-
Giannazzo, F.1
Raineri, V.2
Mirabella, S.3
Impellizzeri, G.4
Priolo, F.5
-
19
-
-
0036120925
-
Two dimensional effects on ultra low energy B implants in Si
-
Giannazzo F, Priolo F, Raineri V, Privitera V, Picariello A, Battaglia A, Moffat S:Two dimensional effects on ultra low energy B implants in Si. J Vac SciTechnol B 2002, 20:414-418
-
(2002)
J Vac SciTechnol B
, vol.20
, pp. 414-418
-
-
Giannazzo, F.1
Priolo, F.2
Raineri, V.3
Privitera, V.4
Picariello, A.5
Battaglia, A.6
Moffat, S.7
-
20
-
-
73649110283
-
2 probed by local mobility measurements
-
Giannazzo F, Sonde S, Raineri V, Rimini E: Irradiation damage in grapheneon SiO2 probed by local mobility measurements. Appl Phys Lett 2009,95:263109
-
(2009)
Appl Phys Lett
, vol.95
, pp. 263109
-
-
Giannazzo, F.1
Sonde, S.2
Raineri, V.3
Rimini, E.4
-
21
-
-
38849201768
-
Von Klitzing K,Yacobi A: Observation of electron-hole puddles in graphene using ascanning single-electron transistor
-
Martin J, Akerman N, Ulbricht G, Lohamann T, Smet JH, Von Klitzing K,Yacobi A: Observation of electron-hole puddles in graphene using ascanning single-electron transistor. Nat Phys 2008, 4:144
-
(2008)
Nat Phys
, vol.4
, pp. 144
-
-
Martin, J.1
Akerman, N.2
Ulbricht, G.3
Lohamann, T.4
Smet, J.H.5
-
22
-
-
36348943354
-
Electronic transport in graphene: Asemiclassical approach including midgap states
-
Stauber T, Peres NMR, Guinea F: Electronic transport in graphene: Asemiclassical approach including midgap states. Phys Rev B 2007,76:205423.
-
(2007)
Phys Rev B
, vol.76
, pp. 205423
-
-
Stauber, T.1
Peres, N.M.R.2
Guinea, F.3
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