Semiconductor nanopores formed by chemical vapor deposition of heteroepitaxial SiC films on SOI(100) substrates

Journal of Vacuum Science and Technology B

Volumn 29, Issue 6, 2011, Pages

  Ikoma, Yoshifumi ^a   Yahaya, Hafizal ^a,b   Kuriyama, Keiji ^a   Sakita, Hirofumi ^a   Nishino, Yuta ^a   Motooka, Teruaki ^a  

^a KYUSHU UNIVERSITY   (Japan)

^b MALAYSIA JAPAN INTERNATIONAL INSTITUTE OF TECHNOLOGY   (Malaysia)

Author keywords

[No Author keywords available]

Indexed keywords

ANISOTROPIC ETCHING; CHEMICAL VAPOR DEPOSITION; NANOPORES; PORE SIZE; SILICON CARBIDE; SILICON ON INSULATOR TECHNOLOGY; SUBSTRATES; WIDE BAND GAP SEMICONDUCTORS;

BACK SIDE SURFACES; BURIED OXIDE LAYERS; CHEMICAL VAPOR DEPOSITIONS (CVD); HETEROEPITAXIAL; HETEROEPITAXIAL FILMS; NANO-METER SCALE; PYRAMIDAL PITS; SILICON-ON-INSULATOR SUBSTRATES;

SULFUR COMPOUNDS;

EID: 84255168880     PISSN: 21662746     EISSN: 21662754     Source Type: Journal    
DOI: 10.1116/1.3646471     Document Type: Article

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