Growth of ultrathin epitaxial 3C-SiC films on Si(100) by pulsed supersonic free jets of CH3SiH3

Japanese Journal of Applied Physics

Volumn 38, Issue 3B, 1999, Pages L301-L303

  Ikoma, Yoshifumi ^a   Endo, Takao ^a   Watanabe, Fumiya ^a   Motooka, Teruaki ^a  

^a KYUSHU UNIVERSITY   (Japan)

Author keywords

3C SiC; Heteroepitaxial growth; Pulsed supersonic free jets; SiC Si(100) interface

Indexed keywords

EPITAXIAL GROWTH; FILM THICKNESS; GROWTH RATE; SILICON CARBIDE; SUPERSONIC AERODYNAMICS; SURFACE ROUGHNESS; ULTRATHIN FILMS;

3C-SIC; LINEAR RELATIONSHIPS; METHYLSILANES; PIT FORMATION; PULSE IRRADIATION; PULSE NUMBER; SUPERSONIC FREE JETS; THIN FILM REGIONS;

SILICON COMPOUNDS;

EID: 85009838641     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/jjap.38.l301     Document Type: Article

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