Growth of silicon carbide on hydrogen-terminated Si (001) 1 × 1 surfaces using dimethyl- and monomethyl silane

Diamond and Related Materials

Volumn 16, Issue 3, 2007, Pages 486-493

  Ziemer, K S ^a   Woodworth, A A ^b   Peng, C Y ^c   Stinespring, C D ^c  

^a Northeastern University   (United States)

^b WEST VIRGINIA UNIVERSITY   (United States)

^c West Virginia University   (United States)

Author keywords

Molecular beam epitaxy; Silicon carbide; Surface characterization; Surface microscopy

Indexed keywords

AUGER ELECTRON SPECTROSCOPY; CRYSTAL GROWTH; HYDROGEN; MOLECULAR BEAM EPITAXY; SCANNING ELECTRON MICROSCOPY; SURFACE TREATMENT;

GAS SPECIES; SURFACE CHARACTERIZATION; SURFACE MICROSCOPY;

SILICON CARBIDE;

EID: 33846813840     PISSN: 09259635     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.diamond.2006.09.026     Document Type: Article

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