New approach to formation of nanopore on SOI: SiC/Si heteroepitaxial growth by supersonic jet CVD

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 6984, Issue , 2008, Pages

  Ikoma, Yoshifumi ^a   Ono, Kenta ^a   Uenuma, Mutsunori ^a   Ogata, Tomohiko ^a   Motooka, Teruaki ^a  

^a KYUSHU UNIVERSITY   (Japan)

Author keywords

Heteroepitaxial growth; Nanopore; Pit formation; Si; SiC; SIMOX; SOI; Supersonic jet CVD

Indexed keywords

CHEMICAL VAPOR DEPOSITION; COATINGS; EPITAXIAL GROWTH; NANOPORES; NANOSTRUCTURED MATERIALS; PHYSICS; SILICON; SILICON CARBIDE; SOLIDS; THICK FILMS; THIN FILM DEVICES; THIN FILMS;

FILM PHYSICS; HETERO EPITAXIAL GROWTH; INTERNATIONAL CONFERENCES; NANO PORE FORMATION; NANO PORES; NEW APPROACHES; SIC GROWTH; SILICON ON INSULATOR (SOI) SUBSTRATES; SUPERSONIC JETS;

FILM GROWTH;

EID: 42149193938     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.792771     Document Type: Conference Paper

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