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Journal of Luminescence

Volumn 132, Issue 4, 2012, Pages 1037-1040

Investigation of defect-related optical properties in Al xIn yGa 1-x-yN quaternary alloys with different Al/In ratios

(4) Hu, S Y a Lee, Y C b Feng, Z C c Yang, S H d

a TUNG FANG DESIGN UNIVERSITY (Taiwan)

b TUNGNAN UNIVERSITY (Taiwan)

c NATIONAL TAIWAN UNIVERSITY (Taiwan)

d NATIONAL TAIWAN OCEAN UNIVERSITY (Taiwan)

Author keywords

AlInGaN; Defects; Photoconductivity; Photoluminescence

Indexed keywords

ALINGAN; AS-GROWN; EMISSION PEAKS; EMISSION PROPERTIES; HIGH RESOLUTION X RAY DIFFRACTION; OPTICAL QUENCHING; PHOTOLUMINESCENCE MEASUREMENTS; PL EMISSION; QUATERNARY ALLOYS; QUENCHING PHENOMENA;

ALUMINUM; DEFECTS; GALLIUM; METALLORGANIC CHEMICAL VAPOR DEPOSITION; OPTICAL PROPERTIES; ORGANIC CHEMICALS; PHOTOCONDUCTIVITY; PHOTOLUMINESCENCE; QUENCHING; SEMICONDUCTOR QUANTUM WELLS; X RAY DIFFRACTION; X RAY DIFFRACTION ANALYSIS;

GALLIUM ALLOYS;

EID: 84055214166 PISSN: 00222313 EISSN: None Source Type: Journal
DOI: 10.1016/j.jlumin.2011.11.028 Document Type: Article

Times cited : (7)

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