GaN based Super HFETs over 700V using the polarization junction concept

Proceedings of the International Symposium on Power Semiconductor Devices and ICs

Volumn , Issue , 2011, Pages 280-283

  Nakajima, Akira ^a   Dhyani, Mahesh H ^a   Narayanan, E M Sankara ^a   Sumida, Yasunobu ^b   Kawai, Hiroji ^b  

^a UNIVERSITY OF SHEFFIELD   (United Kingdom)

^b POWDEC K K   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

BODY DIODE; ELECTRON-GAS DENSITY; GAN BASED; HETERO-INTERFACES; HETEROJUNCTION FIELD EFFECT TRANSISTOR; REVERSE CONDUCTING; SAPPHIRE SUBSTRATES;

ELECTRON GAS; HETEROJUNCTIONS; POLARIZATION; SAPPHIRE;

GALLIUM NITRIDE;

EID: 83755201900     PISSN: 10636854     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/ISPSD.2011.5890845     Document Type: Conference Paper

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