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Applied Physics Express

Volumn 2, Issue 2, 2009, Pages

Low temperature phosphorus activation in germanium through nickel germanidation for shallow n+/p junction

(5) Nishimura, Tomonori a,b Sakata, Shuichi a,c Nagashio, Kosuke a,b Kita, Koji a,b Toriumi, Akira a

a UNIVERSITY OF TOKYO (Japan)

b JAPAN SCIENCE AND TECHNOLOGY AGENCY (Japan)

c INSTITUTE OF INDUSTRIAL SCIENCE (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CHARGE COUPLED DEVICES; GERMANIUM; METALLIC COMPOUNDS; MOS DEVICES; NICKEL ALLOYS; PHOSPHORUS; SEMICONDUCTING GERMANIUM; SEMICONDUCTOR MATERIALS;

CMOS FABRICATIONS; COMPLEMENTARY METAL OXIDE SEMICONDUCTORS; GATE STACKS; GERMANIDATION; HIGH ACTIVATIONS; LOW TEMPERATURES; LOW-TEMPERATURE ACTIVATIONS; N-TYPE IMPURITIES; SELF-ALIGNED GATES; THERMAL ANNEALING PROCESS; ULTRA SHALLOW JUNCTIONS;

SEMICONDUCTOR JUNCTIONS;

EID: 60349125049 PISSN: 18820778 EISSN: 18820786 Source Type: Journal
DOI: 10.1143/APEX.2.021202 Document Type: Article

Times cited : (36)

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