Ga-Sb-Se material for low-power phase change memory

Applied Physics Letters

Volumn 99, Issue 24, 2011, Pages

  Lu, Yegang ^a,b   Song, Sannian ^a   Gong, Yuefeng ^a,b   Song, Zhitang ^a   Rao, Feng ^a   Wu, Liangcai ^a   Liu, Bo ^a   Yao, Dongning ^a  

^a SHANGHAI INSTITUTE OF MICROSYSTEM AND INFORMATION TECHNOLOGY   (China)

^b UNIVERSITY OF CHINESE ACADEMY OF SCIENCES   (China)

Author keywords

[No Author keywords available]

Indexed keywords

CELL PERFORMANCE; DATA RETENTION; LOW MELTING POINT; LOW POWER; LOW THERMAL CONDUCTIVITY; ORDERS OF MAGNITUDE; PHASE CHANGE MEMORY CELLS; RESISTANCE RATIO; REVERSIBLE SWITCHING; STORAGE MEDIUM; SWITCHING SPEED; THERMAL SIMULATIONS;

GALLIUM; GERMANIUM; THERMAL CONDUCTIVITY;

PHASE CHANGE MEMORY;

EID: 83755183973     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3669699     Document Type: Article

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