Density and size control of InP/GaInP quantum dots on GaAs substrate grown by gas source molecular beam epitaxy

Nanotechnology

Volumn 23, Issue 1, 2012, Pages

  Rodel R ^a   Bauer, A ^a   Kremling, S ^a   Reitzenstein, S ^a,b   Hofling S ^a   Kamp, M ^a   Worschech, L ^a   Forchel, A ^a  

^a UNIVERSITY OF WÜRZBURG   (Germany)

^b TECHNISCHE UNIVERSITÄT BERLIN   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ANTI-BUNCHING; AUTOCORRELATION MEASUREMENT; BAND ALIGNMENTS; CYCLIC DEPOSITION; EMISSION CHARACTERISTICS; EXCITATION POWER; GAAS SUBSTRATES; GROWTH INTERRUPTION; INP; INP QUANTUM DOTS; NUMBER OF CYCLES; SELF-ASSEMBLED; SINGLE-PHOTON EMITTERS; SIZE CONTROL; TIME RESOLVED MEASUREMENT; TYPE II; UNDER PULSED EXCITATIONS;

GAS SOURCE MOLECULAR BEAM EPITAXY; PHOTONS;

SEMICONDUCTOR QUANTUM DOTS;

EID: 83455217386     PISSN: 09574484     EISSN: 13616528     Source Type: Journal    
DOI: 10.1088/0957-4484/23/1/015605     Document Type: Article

References (28)

1. Bennett C H and Brassard G 1984 Proc. Int. Conf. on Computers, Systems and Signal Processing (Bangalore) vol 11 p176
2. Michler P, Imamoglu A, Mason M D, Carson P J, Strouse G F and Buratto S K 2000 Nature 406 968
3. Shields A J 2007 Nature Photon. 1 215
4. Michler P, Kiraz A, Becher C, Schoenfeld W V, Petroff P M, Zhang L D, Hu E and Imamoglu A 2000 Science 290 2282
5. Leonard D, Krishnamurthy M, Reaves C M, DenBaars S P and Petroff P M 1993 Appl. Phys. Lett. 63 3203
6. Schmidt O G 2007 Lateral Alignment of Epitaxial Quantum Dots (Springer NanoScience and Technology) (Berlin: Springer)
7. Schneider C et al 2009 Nanotechnology 20 434012
8. Skiba-Szymanska J et al 2011 Nanotechnology 22 065302
9. Albert F et al 2010 Appl. Phys. Lett. 96 151102
10. Convertino A, Cerri L, Leo G and Viticoli S 2004 J. Cryst. Growth 261 458
11. Gérard J M, Génin J B, Lefebvre J, Moinson J M, Lebouché N and Barthe F 1995 J. Cryst. Growth 150 351
12. Chia C K, Chua S J, Miao Z L and Chye Y H 2004 Appl. Phys. Lett. 85 567
13. Kiravittaya S, Nakamura Y and Schmitt O G 2002 Physica E 13 224
14. Schulz W-M, Robach R, Reischle M, Beirne G J, Bommer M, Jetter M and Michler P 2009 Phys. Rev. B 79 035329
15. Elliott C J, Chekhovich E A, Krysa A B, Skolnick M S and Tartakovskii A I 2010 J. Phys.: Conf. Ser. 245 012061
16. Zwiller V, Aichele T, Seifert W, Persson J and Benson O 2003 Appl. Phys. Lett. 82 1509
17. Sugisaki M et al 1999 Phys. Rev. B 59 R5300
18. Ugur A, Hatami F, Masselink W T, Vamivakas A N, Lombez L and Atatüre M 2008 Appl. Phys. Lett. 93 143111
19. Richter D, Robach R, Schulz W-M, Koroknay E, Kessler C, Jetter M and Michler P 2010 Appl. Phys. Lett. 97 063107
20. Zinke-Allmang M, Feldmann L C and Grabow M H 1992 Surf. Sci. Rep. 16 377
21. Nakata Y, Mukai K, Sugawara M, Ohtsubo K, Ishikawa H and Yokoyama N 2000 J. Cryst. Growth 208 93
22. Jetter M, Rossi M, Beirne G, Porsche J, Glynn T J, Scholz F and Schweizer H 2003 Phys. Status Solidi c 0 1197
23. Pryor C, Pistol M-E and Samuelson L 1997 Phys. Rev. B 56 10404
24. Shik A, Ruda H and Sargent E H 2001 Nanotechnology 12 523
25. Glaser E R, Bennet B R, Shanabrook B V and Magno R 1996 Appl. Phys. Lett. 68 3614
26. Hatami F et al 1995 Appl. Phys. Lett. 67 656
27. Beirne G J, Michler P, Jetter M and Schweizer H 2005 J. Appl. Phys. 98 093522
28. Hessman D, Jonas P, Pistol M-E, Pryor C and Samuelson L 2001 Phys. Rev. B 64 233308