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Volumn 96, Issue 15, 2010, Pages

Quantum efficiency and oscillator strength of site-controlled InAs quantum dots

(9) Albert, F a Stobbe, S b Schneider, C a Heindel, T a Reitzenstein, S a Hofling S a Lodahl, P b Worschech, L a Forchel, A a

a UNIVERSITY OF WÜRZBURG (Germany)

b TECHNICAL UNIVERSITY OF DENMARK (Denmark)

Author keywords

[No Author keywords available]

Indexed keywords

CAPPING LAYER; INAS QUANTUM DOTS; NANOHOLES; NON-RADIATIVE RECOMBINATIONS; NONIDEAL; NONRADIATIVE DECAY RATE; ON TIME; OSCILLATOR STRENGTHS; QUANTUM DOT; VARYING THICKNESS;

DECAY (ORGANIC); OPTICAL WAVEGUIDES; PHOTOLUMINESCENCE SPECTROSCOPY; SEMICONDUCTING INDIUM; SEMICONDUCTOR QUANTUM DOTS;

QUANTUM EFFICIENCY;

EID: 77951587606 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.3393988 Document Type: Article

Times cited : (39)

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