Low-density InP quantum dots embedded in Ga0.51 In 0.49 P with high optical quality realized by a strain inducing layer

Applied Physics Letters

Volumn 97, Issue 6, 2010, Pages

  Richter, Daniel ^a   Roßbach, Robert ^a   Schulz, Wolfgang Michael ^a   Koroknay, Elisabeth ^a   Kessler, Christian ^a   Jetter, Michael ^a   Michler, Peter ^a  

^a UNIVERSITY OF STUTTGART   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

DECAY TIME; INP; INP QUANTUM DOTS; MICROPHOTOLUMINESCENCE; OPTICAL QUALITIES; OPTICALLY ACTIVE; ORDER OF MAGNITUDE; QUANTUM DOT; SEED LAYER; SINGLE PHOTON EMISSION;

GALLIUM; OPTICAL WAVEGUIDES; SIGNAL TO NOISE RATIO;

SEMICONDUCTOR QUANTUM DOTS;

EID: 77955726035     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3478848     Document Type: Article

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