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Chinese Physics Letters

Volumn 28, Issue 12, 2011, Pages

Density increase of upper quantum dots in dual InGaN quantum-dot layers

(5) Lv, Wen Bin a Wang, Lai a Wang, Jia Xing a Hao, Zhi Biao a Luo, Yi a

a TSINGHUA UNIVERSITY (China)

Author keywords

[No Author keywords available]

Indexed keywords

GALLIUM NITRIDE; III-V SEMICONDUCTORS; METALLORGANIC CHEMICAL VAPOR DEPOSITION; NANOCRYSTALS; ORGANIC CHEMICALS; ORGANOMETALLICS; SEMICONDUCTOR ALLOYS; TEMPERATURE;

AVERAGE DIAMETER; AVERAGE HEIGHT; CONDITION; DUAL-LAYERS; INGAN QUANTUM DOTS; LOW-TEMPERATURE-GROWN GAN; METAL-ORGANIC CHEMICAL VAPOUR DEPOSITIONS; QUANTUM DOT LAYERS; SINGLE LAYER; UPPER LAYER;

SEMICONDUCTOR QUANTUM DOTS;

EID: 83455210952 PISSN: 0256307X EISSN: 17413540 Source Type: Journal
DOI: 10.1088/0256-307X/28/12/128101 Document Type: Article

Times cited : (5)

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