Improved capping layer growth towards increased stability of InGaN quantum dots

Physica Status Solidi (C) Current Topics in Solid State Physics

Volumn 6, Issue SUPPL. 2, 2009, Pages

  Tessarek, Christian ^a   Yamaguchi, Tomohiro ^a   Figge, Stephan ^a   Hommel, Detlef ^a  

^a UNIVERSITY OF BREMEN   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

CAPPING LAYER; CARRIER GAS; GROWTH OF GAN; INGAN QUANTUM DOTS; LASER STRUCTURES; NUCLEATION LAYERS; PHOTOLUMINESCENCE EMISSION SPECTRA; ROOM TEMPERATURE; SPINODAL DECOMPOSITION MODEL; SURFACE QUALITIES; TEMPERATURE RAMP;

DISSOLUTION; EMISSION SPECTROSCOPY; GALLIUM ALLOYS; GALLIUM NITRIDE; NITROGEN; SEMICONDUCTOR QUANTUM WELLS; SPINODAL DECOMPOSITION;

SEMICONDUCTOR QUANTUM DOTS;

EID: 71549124912     PISSN: 18626351     EISSN: 16101642     Source Type: Journal    
DOI: 10.1002/pssc.200880913     Document Type: Article

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