Effects of an InGaAs cap layer on the optical properties of InAs quantum dot molecules

Chinese Physics Letters

Volumn 28, Issue 6, 2011, Pages

  Tian, Peng ^a   Huang, Li Rong ^a   Yuan, Xiu Hua ^a   Huang, De Xiu ^a  

^a HUAZHONG UNIVERSITY OF SCIENCE AND TECHNOLOGY   (China)

Author keywords

[No Author keywords available]

Indexed keywords

EMISSION SPECTROSCOPY; GALLIUM ARSENIDE; GROUND STATE; III-V SEMICONDUCTORS; INDIUM ARSENIDE; METALLORGANIC CHEMICAL VAPOR DEPOSITION; MOLECULES; NANOCRYSTALS; OPTICAL PROPERTIES; ORGANIC CHEMICALS; ORGANOMETALLICS; SEMICONDUCTING INDIUM; SEMICONDUCTOR ALLOYS; SEMICONDUCTOR QUANTUM DOTS;

CAP LAYERS; EMISSION SPECTRUMS; EMISSION WAVELENGTH; GAAS SUBSTRATES; INAS QUANTUM DOTS; METAL-ORGANIC CHEMICAL VAPOUR DEPOSITIONS; PEAK INTENSITY; QUANTUM DOT MOLECULES; RED SHIFT; STRUCTURAL AND OPTICAL PROPERTIES;

SEMICONDUCTING INDIUM GALLIUM ARSENIDE;

EID: 79959451951     PISSN: 0256307X     EISSN: 17413540     Source Type: Journal    
DOI: 10.1088/0256-307X/28/6/067304     Document Type: Article

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