Structure and heat capacity of wurtzite GaN from 113 to 1073 K

Chinese Physics Letters

Volumn 16, Issue 2, 1999, Pages 107-108

  Chen, Xiao Long ^a   Lan, Yu Cheng ^a   Liang, Jing Kui ^a,b   Cheng, Xiang Rong ^a   Xu, Yan Ping ^a   Xu, Tao ^a   Jiang, Pei Zhi ^a   Lu, Kun Quan ^a  

^a INSTITUTE OF PHYSICS   (China)

^b INTERNATIONAL CENTRE FOR MATERIALS PHYSICS   (China)

Author keywords

[No Author keywords available]

Indexed keywords

GALLIUM NITRIDE; III-V SEMICONDUCTORS; X RAY DIFFRACTION; ZINC SULFIDE;

GAS REACTION; POWDERS X-RAY DIFFRACTIONS; REACTION METHOD; RIETVELD TECHNIQUE; SYNTHESISED; TEMPERATURE RANGE; WURTZITE GAN; WURTZITE STRUCTURE;

SPECIFIC HEAT;

EID: 0033416519     PISSN: 0256307X     EISSN: None     Source Type: Journal    
DOI: 10.1088/0256-307X/16/2/011     Document Type: Article

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