Reset current reduction in phase-change memory cell using a thin interfacial oxide layer

European Solid-State Device Research Conference

Volumn , Issue , 2011, Pages 95-98

  Hubert, Q ^a   Jahan, C ^a   Toffoli, A ^a   Perniola, L ^a   Sousa, V ^a   Persico, A ^a   Nodin, J F ^a   Grampeix, H ^a   Aussenac, F ^a   De Salvo, B ^a  

^a CEA LETI   (France)

Author keywords

[No Author keywords available]

Indexed keywords

CONTACT AREAS; CURRENT REDUCTION; ELECTRICAL ANALYSIS; ELECTRICAL CHARACTERISTIC; INTERFACIAL OXIDE LAYERS; MEMORY CELL; ORDERS OF MAGNITUDE; PHASE CHANGES; PROGRAMMING WINDOW; RESET CURRENTS; THERMAL EFFICIENCY; TIO;

CELLS; GERMANIUM; HAFNIUM OXIDES; SEMICONDUCTOR STORAGE; SOLID STATE DEVICES; TITANIUM DIOXIDE; TUNGSTEN;

PHASE CHANGE MEMORY;

EID: 82955194988     PISSN: 19308876     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/ESSDERC.2011.6044226     Document Type: Conference Paper

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