Electronic structure of Al-doped ZnO transparent conductive thin films studied by x-ray absorption and emission spectroscopies

Journal of Applied Physics

Volumn 110, Issue 10, 2011, Pages

  Huang, W H ^a   Sun, S J ^a   Chiou, J W ^a   Chou, H ^b   Chan, T S ^c   Lin, H J ^c   Kumar, Krishna ^d   Guo, J H ^e  

^a NATIONAL UNIVERSITY OF KAOHSIUNG   (Taiwan)

^b NATIONAL SUN YAT SEN UNIVERSITY   (Taiwan)

^c NATIONAL SYNCHROTRON RADIATION RESEARCH CENTER   (Taiwan)

^d UNIVERSITY OF WATERLOO   (Canada)

^e LAWRENCE BERKELEY NATIONAL LABORATORY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

AL-DOPED ZNO; AL-DOPING; AMORPHOUS STRUCTURES; AZO THIN FILMS; BAND GAPS; EFFECTIVE CHARGE; ELECTRON TRANSFER; FLEXIBLE SUBSTRATE; GLASS SUBSTRATES; HIGH-PURITY; IONIC CHARACTER; LOW TEMPERATURES; O K-EDGES; OXYGEN IONS; RF SPUTTERING METHOD; SAMPLE DEPOSITION; SPUTTERING GAS; THIN FILM CONDUCTORS; TRANSPARENT CONDUCTIVE THIN FILMS; UNOCCUPIED STATE; X RAY EMISSION SPECTROSCOPY; X-RAY ABSORPTION AND EMISSION SPECTROSCOPY; X-RAY ABSORPTION NEAR-EDGE STRUCTURE; XANES SPECTRA; ZNO;

AMORPHOUS FILMS; ATOMIC SPECTROSCOPY; CONDUCTIVE FILMS; DEPOSITION; ELECTRONIC STRUCTURE; EMISSION SPECTROSCOPY; NEON; OXYGEN; SEMICONDUCTOR DOPING; SUBSTRATES; THIN FILMS; VAPOR DEPOSITION; X RAY ABSORPTION; X RAY CRYSTALLOGRAPHY; ZINC; ZINC OXIDE;

ALUMINUM;

EID: 82555204711     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3662202     Document Type: Conference Paper

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