Characterization of ZnO and ZnO:Al films deposited by MOCVD on oriented and amorphous substrates

Microelectronics Journal

Volumn 40, Issue 2, 2009, Pages 381-384

  Fragala, Maria Elena ^a   Malandrino, Graziella ^a  

^a UNIVERSITY OF CATANIA   (Italy)

Author keywords

MOCVD; ZnO; ZnO:Al

Indexed keywords

ACETONE; ALUMINUM; AMORPHOUS FILMS; CHEMICAL VAPOR DEPOSITION; ELECTRODEPOSITION; ENAMELS; METALLIC FILMS; ORGANIC CHEMICALS; ORGANIC COMPOUNDS; ORGANOMETALLICS; OXIDE FILMS; SCANNING ELECTRON MICROSCOPY; SEMICONDUCTING ZINC COMPOUNDS; SUBSTRATES; X RAY ANALYSIS; X RAY DIFFRACTION ANALYSIS; ZINC;

2-THENOYLTRIFLUOROACETONE; ACETYLACETONE; AFM; AL CONCENTRATIONS; AMORPHOUS SUBSTRATES; CHEMICAL VAPOUR DEPOSITIONS; DEPOSITED LAYERS; DEPOSITION CONDITIONS; DIFFERENT SUBSTRATES; DOPED FILMS; ENERGY DISPERSIVE; FIELD EMISSION-SCANNING ELECTRON MICROSCOPIES; FILM STRUCTURES; FILM TEXTURES; METAL ORGANIC; MOCVD; OPTICAL TRANSPARENCIES; PREFERENTIAL ORIENTATIONS; SUBSTRATE NATURES; TRANSPARENT CONDUCTING OXIDES; X-RAY DIFFRACTIONS; XRD MEASUREMENTS; ZNO; ZNO LAYERS; ZNO:AL; ZNO:AL FILMS;

ZINC OXIDE;

EID: 59049098401     PISSN: 00262692     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mejo.2008.09.003     Document Type: Article

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