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Journal of Physics D: Applied Physics

Volumn 44, Issue 20, 2011, Pages

Extended wide band gap amorphous aluminium-doped zinc oxide thin films grown at liquid nitrogen temperature

(8) Chou, H a Yang, M S a Wu, C P a Tsao, Y C a Chen, B J a Liao, T F a Sun, S J b Chiou, J W b

a NATIONAL SUN YAT SEN UNIVERSITY (Taiwan)

b NATIONAL UNIVERSITY OF KAOHSIUNG (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS PHASE; AS-GROWN; AZO FILMS; GLASS SUBSTRATES; INSPECTION PROCESS; INTERFACE ENERGY; LIQUID NITROGEN TEMPERATURE; LOW TEMPERATURES; MIXTURE PHASE; NANOCRYSTALLINE FILMS; NANOCRYSTALLINE PHASIS; RF-SPUTTERING; SELECTIVE GROWTH; SUBSTRATE SURFACE TEMPERATURE; TEM; TRANSMISSION ELECTRON MICROSCOPE; WIDE BAND GAP; ZINC OXIDE THIN FILMS;

ALUMINUM; ELECTRON BEAMS; ENERGY GAP; LIQUID NITROGEN; MIXTURES; NANOCRYSTALLINE ALLOYS; OXIDE FILMS; PHASE INTERFACES; SUBSTRATES; THERMAL CONDUCTIVITY; THIN FILMS; TRANSMISSION ELECTRON MICROSCOPY; ZINC; ZINC OXIDE;

AMORPHOUS FILMS;

EID: 79955825462 PISSN: 00223727 EISSN: 13616463 Source Type: Journal
DOI: 10.1088/0022-3727/44/20/205404 Document Type: Article

Times cited : (13)

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