Ab-initio valence band spectra of Al, In doped ZnO

Thin Solid Films

Volumn 517, Issue 7, 2009, Pages 2448-2451

  Palacios, P ^a   Sanchez K ^a   Wahnon P ^a  

^a UNIVERSIDAD POLITÉCNICA DE MADRID   (Spain)

Author keywords

Chalcogenides; Electronic structure; Photoelectron spectroscopy (PES); Photovoltaic materials

Indexed keywords

ALUMINUM; BINDING ENERGY; CALCULATIONS; CHALCOGENIDES; DENSITY FUNCTIONAL THEORY; DOPING (ADDITIVES); ELECTRONIC STRUCTURE; II-VI SEMICONDUCTORS; INORGANIC COMPOUNDS; OXYGEN VACANCIES; PHOTOELECTRONS; PHOTONS; ZINC OXIDE;

DONOR LEVELS; DOPED SYSTEMS; EFFECT OF OXYGEN; ELECTRONIC CHARACTERIZATION; EXPERIMENTAL VALUES; HUBBARD CORRELATION; PHOTOVOLTAIC MATERIALS; VALENCE BAND SPECTRA;

PHOTOELECTRON SPECTROSCOPY;

EID: 58949090457     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2008.11.037     Document Type: Article

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