Micro/nanoscale spatial resolution temperature probing for the interfacial thermal characterization of epitaxial graphene on 4H-SiC

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Volumn 7, Issue 23, 2011, Pages 3324-3333

  Yue, Yanan ^a   Zhang, Jingchao ^a   Wang, Xinwei ^a  

^a Iowa State University of Science and Technology   (United States)

Author keywords

graphene; microscale; nanoscale; Raman spectroscopy; thermal expansion mismatch

Indexed keywords

4H-SIC SUBSTRATE; DC CURRENT; EPITAXIAL GRAPHENE; GRAPHENE LAYERS; GRAPHENE SHEETS; HEATING PROCESS; HIGH THERMAL; INTERFACE DELAMINATION; INTERFACIAL THERMAL RESISTANCE; MICRO-SCALES; MICROMETER SCALE; NANO-METER SCALE; NANOSCALE; OUT-OF-PLANE DIRECTION; PEAK WIDTHS; PHONON COUPLING; RAMAN FREQUENCIES; RAMAN MEASUREMENTS; RAMAN PEAK; RAMAN THERMOMETRY; SIC SUBSTRATES; SPATIAL RESOLUTION; SURFACE HEAT FLUXES; THERMAL CHARACTERIZATION; THERMAL CONTACT RESISTANCE; THERMAL EXPANSION MISMATCH; THERMAL TRANSPORT; VERTICAL DIRECTION;

EPITAXIAL GROWTH; EXPERIMENTS; GRAPHENE; HEAT FLUX; HEAT RESISTANCE; HEATING; INTERFACES (MATERIALS); JOULE HEATING; MOLECULAR DYNAMICS; PHONONS; RAMAN SPECTROSCOPY; SEMICONDUCTING SILICON COMPOUNDS; SILICON CARBIDE; SUBSTRATES;

THERMAL EXPANSION;

GRAPHITE; HYDROGEN; INORGANIC COMPOUND; NANOMATERIAL; SILICON CARBIDE; SILICON DERIVATIVE;

ARTICLE; CHEMISTRY; HEAT; METHODOLOGY; MOLECULAR DYNAMICS; NANOTECHNOLOGY; RAMAN SPECTROMETRY; TEMPERATURE; THERMAL CONDUCTIVITY;

CARBON COMPOUNDS, INORGANIC; GRAPHITE; HOT TEMPERATURE; HYDROGEN; MOLECULAR DYNAMICS SIMULATION; NANOSTRUCTURES; NANOTECHNOLOGY; SILICON COMPOUNDS; SPECTRUM ANALYSIS, RAMAN; TEMPERATURE; THERMAL CONDUCTIVITY;

EID: 82555189941     PISSN: 16136810     EISSN: 16136829     Source Type: Journal    
DOI: 10.1002/smll.201101598     Document Type: Article

References (52)

1. a) K. S. Novoselov, A. K. Geim, S. V. Morozov, D. Jiang, Y. Zhang, S. V. Dubonos, I. V. Grigorieva, A. A. Firsov, Science 2004, 306, 666
2. b) K. S. Novoselov, A. K. Geim, S. V. Morozov, D. Jiang, M. I. Katsnelson, I. V. Grigorieva, S. V. Dubonos, A. A. Firsov, Nature 2005, 438, 197
3. c) A. K. Geim, K. S. Novoselov, Nat. Mater. 2007, 6, 183
4. d) Y. Zhang, Y.-W. Tan, H. L. Stormer, P. Kim, Nature 2005, 438, 201.
5. a) K. I. Bolotin, K. J. Sikes, J. Hone, H. L. Stormer, P. Kim, Phys. Rev. Lett. 2008, 101, 096802
6. b) X. Du, I. Skachko, A. Barker, E. Y. Andrei, Nat. Nanotechnol. 2008, 3, 491
7. c) Y. Q. Wu, P. D. Ye, M. A. Capano, Y. Xuan, Y. Sui, M. Qi, J. A. Cooper, T. Shen, D. Pandey, G. Prakash, R. Reifenberger, Appl. Phys. Lett. 2008, 92, 092102
8. d) A. A. Balandin, S. Ghosh, W. Bao, I. Calizo, D. Teweldebrhan, F. Miao, C. N. Lau, Nano Lett. 2008, 8, 902.
9. a) S. Ghosh, I. Calizo, D. Teweldebrhan, E. P. Pokatilov, D. L. Nika, A. A. Balandin, W. Bao, F. Miao, C. N. Lau, Appl. Phys. Lett. 2008, 92, 151911
10. b) J.-U. Lee, D. Yoon, H. Kim, S. W. Lee, H. Cheong, Phys. Rev. B 2011, 83, 081419
11. c) S. Ghosh, W. Bao, D. L. Nika, S. Subrina, E. P. Pokatilov, C. N. Lau, A. A. Balandin, Nat. Mater. 2010, 9, 555.
12. a) D. L. Nika, E. P. Pokatilov, A. S. Askerov, A. A. Balandin, Phys. Rev. B 2009, 79, 155413
13. b) J. Hu, X. Ruan, Y. P. Chen, Nano Lett. 2009, 9, 2730
14. c) D. L. Nika, S. Ghosh, E. P. Pokatilov, A. A. Balandin, Appl. Phys. Lett. 2009, 94, 203103.
15. a) Z. H. Ni, W. Chen, X. F. Fan, J. L. Kuo, T. Yu, A. T. S. Wee, Z. X. Shen, Phys. Rev. B 2008, 77, 115416
16. b) C. Berger, Z. Song, X. Li, X. Wu, N. Brown, C. Naud, D. Mayou, T. Li, J. Hass, A. N. Marchenkov, E. H. Conrad, P. N. First, W. A. de Heer, Science 2006, 312, 1191.
17. a) K. V. Emtsev, F. Speck, T. Seyller, L. Ley, J. D. Riley, Phys. Rev. B 2008, 77, 155303
18. b) A. Mattausch, O. Pankratov, Phys. Rev. Lett. 2007, 99, 076802
19. c) U. Starke, C. Riedl, J. Phys.: Condens. Matter 2009, 21, 134016.
20. M. Freitag, M. Steiner, Y. Martin, V. Perebeinos, Z. Chen, J. C. Tsang, P. Avouris, Nano Lett. 2009, 9, 1883.
21. M. A. Panzer, K. E. Goodson, J. Appl. Phys. 2008, 103, 094301.
22. Z. Chen, W. Jang, W. Bao, C. N. Lau, C. Dames, Appl. Phys. Lett. 2009, 95, 161910.
23. A. J. Schmidt, K. C. Collins, A. J. Minnich, G. Chen, J. Appl. Phys. 2010, 107, 104907.
24. Y. Yue, G. Eres, X. Wang, L. Guo, Appl. Phys. A 2009, 97, 19.
25. a) R. F. Wallis, M. Balkanski, Many-Body Aspects of Solid State Spectroscopy, North-Holland Physics, Amsterdam 1986
26. b) W. H. Weber, Raman Scattering in Materials Science, Springer, New York 2000.
27. a) A. C. Ferrari, J. C. Meyer, V. Scardaci, C. Casiraghi, M. Lazzeri, F. Mauri, S. Piscanec, D. Jiang, K. S. Novoselov, S. Roth, A. K. Geim, Phys. Rev. Lett. 2006, 97, 187401
28. b) J. C. Burton, L. Sun, M. Pophristic, S. J. Lukacs, F. H. Long, Z. C. Feng, I. T. Ferguson, J. Appl. Phys. 1998, 84, 6268.
29. D. Graf, F. Molitor, K. Ensslin, C. Stampfer, A. Jungen, C. Hierold, L. Wirtz, Nano Lett. 2007, 7, 238.
30. I. Calizo, A. A. Balandin, W. Bao, F. Miao, C. N. Lau, Nano Lett. 2007, 7, 2645.
31. Z. H. Ni, H. M. Wang, J. Kasim, H. M. Fan, T. Yu, Y. H. Wu, Y. P. Feng, Z. X. Shen, Nano Lett. 2007, 7, 2758.
32. C. Thomsen, S. Reich, Phys. Rev. Lett. 2000, 85, 5214.
33. H. Harima, T. Hosoda, S. Nakashima, J. Electro. Mater. 1999, 28, 141.
34. a) L. Zhang, Z. Jia, L. Huang, S. O'Brien, Z. Yu, J. Phys. Chem. C 2008, 112, 13893
35. b) M. J. Allen, J. D. Fowler, V. C. Tung, Y. Yang, B. H. Weiller, R. B. Kaner, Appl. Phys. Lett. 2008, 93, 193119.
36. N. Bonini, R. Rao, A. M. Rao, N. Marzari, J. Menéndez, Phys. Status Solidi B 2008, 245, 2149.
37. M. Balkanski, R. F. Wallis, E. Haro, Phys. Rev. B 1983, 28, 1928.
38. H.-K. Lyeo, D. G. Cahill, Phys. Rev. B 2006, 73, 144301.
39. J.-W. Jiang, J.-S. Wang, B. Li, Phys. Rev. B 2009, 80, 205429.
40. J. Rohrl, M. Hundhausen, K. V. Emtsev, T. Seyller, R. Graupner, L. Ley, Appl. Phys. Lett. 2008, 92, 201918.
41. Z. Li, R. C. Bradt, J. Appl. Phys. 1986, 60, 612.
42. N. Ferralis, R. Maboudian, C. Carraro, Phys. Rev. Lett. 2008, 101, 156801.
43. G. Chen, Int. J. Therm. Sci. 2000, 39, 471.
44. A. J. Schmidt, X. Chen, G. Chen, Rev. Sci. Instrum. 2008, 79, 114902.
45. R. R. Nair, P. Blake, A. N. Grigorenko, K. S. Novoselov, T. J. Booth, T. Stauber, N. M. R. Peres, A. K. Geim, Science 2008, 320, 1308.
46. C. Faugeras, B. Faugeras, M. Orlita, M. Potemski, R. R. Nair, A. K. Geim, ACS Nano 2010, 4, 1889.
47. W. Cai, A. L. Moore, Y. Zhu, X. Li, S. Chen, L. Shi, R. S. Ruoff, Nano Lett. 2010, 10, 1645.
48. G. L. Harris, Properties of Silicon Carbide, The Institution of Electrical Engineers, London 1995.
49. F. P. Incropera, D. P. Dewitt, T. L. Bergman, A. S. Lavine, Fundamentals of Heat and Mass Transfer, John Wiley & Sons, Inc., New York 2007.
50. P. Nemes-Incze, Z. Osváth, K. Kamarás, L. P. Birõ, Carbon 2008, 46, 1435.
51. K. F. Mak, J. Shan, T. F. Heinz, Phys. Rev. Lett. 2011, 106, 046401.
52. T. Beechem, S. Graham, S. P. Kearney, L. M. Phinney, J. R. Serrano, Rev. Sci. Instrum. 2007, 78, 061301.