Temperature measurement in a silicon carbide light emitting diode by Raman scattering

Journal of Electronic Materials

Volumn 28, Issue 3, 1999, Pages 141-143

  Harima, H ^a   Hosoda, T ^a   Nakashima, S ^a  

^a OSAKA UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CURRENT DENSITY; PHONONS; RAMAN SCATTERING; SEMICONDUCTING SILICON COMPOUNDS; SILICON CARBIDE; TEMPERATURE MEASUREMENT;

FREQUENCY SHIFT; TRANSVERSE-OPTIC PHONON MODE;

LIGHT EMITTING DIODES;

EID: 0032664893     PISSN: 03615235     EISSN: None     Source Type: Journal    
DOI: 10.1007/s11664-999-0003-4     Document Type: Article

References (6)

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3. See, e.g., Transactions on 4th Intl. High Temperature Electronics Conf. (HiTEC-98), (Albuquerque, 1998).
4. D. Olego and M. Cardona, Phys. Rev. B 25, 3889 (1982).
5. M. Balkanski, R.F. Wallis and E. Haro, Phys. Rev. B 28, 1928 (1983).
6. T. Nakata, K. Koga, Y. Matsushita, Y. Ueda and T. Niina, Springer Proc. in Physics, Amorphous and Crystalline Silicon Carbide and Related Materials II, Vol. 43, eds. M. Rahman, C. Yang and G. Harris (Berlin, Heidelberg: Springer-Verlag, 1989).