SCOPUS 정보 검색 플랫폼

Volumn 82, Issue 11, 2011, Pages

Note: Fast and reliable fracture strain extraction technique applied to silicon at nanometer scale

(8) Passi, Vikram a,b Bhaskar, Umesh a Pardoen, Thomas a Sodervall, Ulf c Nilsson, Bengt c Petersson, Goran c Hagberg, Mats c Raskin, Jean Pierre a

a UNIVERSITÉ CATHOLIQUE DE LOUVAIN (Belgium)

b INSTITUT D ELECTRONIQUE (France)

c CHALMERS UNIVERSITY OF TECHNOLOGY (Sweden)

Author keywords

[No Author keywords available]

Indexed keywords

CROSS SECTION; DOWN-SCALING; EXTRACTION PROCEDURE; EXTRACTION TECHNIQUES; FABRICATION PROCESS; FRACTURE STRAIN; LARGE STRAINS; NANO-METER SCALE; SILICON NANOWIRES;

FRACTURE; NANOWIRES; STRAIN;

MONOCRYSTALLINE SILICON;

EID: 82555182667 PISSN: 00346748 EISSN: None Source Type: Journal
DOI: 10.1063/1.3655464 Document Type: Article

Times cited : (7)

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