Annealing temperature window for tunneling magnetoresistance and spin torque switching in CoFeB/MgO/CoFeB perpendicular magnetic tunnel junctions

Journal of Applied Physics

Volumn 110, Issue 10, 2011, Pages

  Meng, H ^a   Sbiaa, R ^a   Wang, C C ^a   Lua, S Y H ^a   Akhtar, M A K ^a  

^a DATA STORAGE INSTITUTE   (Singapore)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING PROCESS; ANNEALING TEMPERATURES; COMBINED EFFECT; CRITICAL SWITCHING CURRENT; FREE LAYERS; MAGNETIC TUNNEL JUNCTION; PERPENDICULAR MAGNETIC ANISOTROPY; REFERENCE LAYER; ROOM TEMPERATURE; SPIN TRANSFER TORQUE; SPIN-TORQUE SWITCHING; SWITCHING CURRENT DENSITY; SWITCHING FIELD; THICKNESS DEPENDENCE; TUNNELING MAGNETO RESISTIVE; TUNNELING MAGNETORESISTANCE;

ANNEALING; COBALT COMPOUNDS; DROPS; ELECTRIC RESISTANCE; MAGNETIC ANISOTROPY; MAGNETIC DEVICES; SATURATION MAGNETIZATION; SWITCHING;

TUNNEL JUNCTIONS;

EID: 82555179294     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3662893     Document Type: Conference Paper

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