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Journal of Applied Physics

Volumn 110, Issue 3, 2011, Pages

Annealing effects on CoFeB-MgO magnetic tunnel junctions with perpendicular anisotropy

(5) Meng, H a Lum, W H a Sbiaa, R a Lua, S Y H a Tan, H K a

a DATA STORAGE INSTITUTE (Singapore)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; BORON COMPOUNDS; COBALT COMPOUNDS; IRON COMPOUNDS; MAGNETIC ANISOTROPY; MAGNETIC DEVICES; TUNNEL JUNCTIONS; TUNNELLING MAGNETORESISTANCE;

ANISOTROPY ENERGY DENSITY; ANNEALING EFFECTS; ANNEALING TEMPERATURES; COFEB FILM; MAGNETIC TUNNEL JUNCTION; MAGNETORESISTIVE; NON-VOLATILE MEMORY; NONVOLATILE MEMORY; PERPENDICULAR ANISOTROPY; TEMPERATURE WINDOW;

MAGNESIA;

EID: 85109384243 PISSN: 00218979 EISSN: 10897550 Source Type: Journal
DOI: 10.1063/1.3611426 Document Type: Article

Times cited : (91)

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