Low resistance spin-dependent magnetic tunnel junction with high breakdown voltage for current-induced-magnetization-switching devices

Journal of Applied Physics

Volumn 97, Issue 10, 2005, Pages

  Meng, Hao ^a   Wang, Jianguo ^a   Diao, Zhitao ^b   Wang, Jian Ping ^a  

^a University of Minnesota   (United States)

^b Grandis   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

MAGNETIC TUNNEL JUNCTIONS (MTJ); MULTILAYER STRUCTURES; SPIN TRANSFER; SURFACE FORMATION;

CRYSTALLIZATION; ELECTRIC BREAKDOWN; MAGNETIZATION; MAGNETORESISTANCE; OXIDATION; PHOTOLITHOGRAPHY; SWITCHING;

TUNNEL JUNCTIONS;

EID: 20944446226     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1857651     Document Type: Conference Paper

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