High temperature annealing stability of magnetic properties in MgO-based perpendicular magnetic tunnel junction stacks with CoFeB polarizing layer

Journal of Applied Physics

Volumn 109, Issue 7, 2011, Pages

  Rahman, M Tofizur ^a   Lyle, Andrew ^a   Hu, Guohan ^b   Gallagher, William J ^b   Wang, Jian Ping ^a  

^a University of Minnesota   (United States)

^b IBM T J WATSON RESEARCH CENTER   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CO/PD MULTILAYERS; FREE LAYERS; HIGH-TEMPERATURE ANNEALING; IN-VACUUM; INTERFACE MORPHOLOGIES; M-H LOOPS; MAGNETIC TUNNEL JUNCTION; PERPENDICULAR ANISOTROPY; SQUARENESS RATIO; STABILITY OF MAGNETIC PROPERTIES; STACK STRUCTURE; TUNNELING MAGNETORESISTANCE; X-RAY REFLECTIVITY MEASUREMENTS;

ANISOTROPY; ANNEALING; COBALT COMPOUNDS; ELECTRIC RESISTANCE; MAGNETIC MULTILAYERS; MAGNETIC PROPERTIES; MAGNETORESISTANCE; PLATINUM; TUNNEL JUNCTIONS;

MAGNETIC DEVICES;

EID: 79955456551     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3549605     Document Type: Conference Paper

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