Band structure of strained Si1-xGex

Wuli Xuebao/Acta Physica Sinica

Volumn 58, Issue 11, 2009, Pages 7947-7951

  Song, Jian Jun ^a   Zhang, He Ming ^a   Hu, Hui Yong ^a   Xuan, Rong Xi ^a   Dai, Xian Ying ^a  

^a XIDIAN UNIVERSITY   (China)

Author keywords

Band structure; K. P method; Strained Si1 xGex

Indexed keywords

EID: 71249126765     PISSN: 10003290     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article

References (9)

1. Song J J, Zhang H M, Dian X Y, Hu H Y, Xuan R X 2008 Acta Phys. Sin. 57 5918 (in Chinese)
2. Song J J, Zhang H M, Hu H Y, Dai X Y, Xuan R X 2007 Chin. Phys. 16 3827
3. Liu H H, Duan X F, Xu Q X 2009 Micron 40 274
4. Guillaume T, Mouis M 2006 Solid-State Electronics 50 701
5. Smirnov S, Kosina H 2004 Solid-State Electronics 48 1325
6. Levinshtein M E, Rumyantsev S L, Shur M S 2001 Properties of Advanced Semiconductor Materials (New York: John Wiley & Sons)
7. Fischetti M V, Laux S E 1996 Appl. Phys. 80 2234
8. Kasper E 2002 Properties of Strained and Relaxed Silicon Germanium (Beijing: National Defense Industry Press) p114
9. Manku T, Nathan A 1991 Appl. Phys. 43 12634