Optimisation of surface capacitance and leakage currents on Ion Beam Sputtered SrTiO3-based MIM capacitors for above IC technology

Integrated Ferroelectrics

Volumn 67, Issue , 2004, Pages 93-101

  Guillan, Julie ^a   Tartavel, Gérard ^b   Defaÿ, Emmanuel ^b   Ulmer, Laurent ^b   Galéra, Ludivine ^b   André, Bernard ^b   Baume, Françoise ^b  

^a STMICROELECTRONICS   (France)

^b CEA LETI   (France)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; ATOMIC FORCE MICROSCOPY; CAPACITANCE; ELECTRODEPOSITION; SPUTTERING; SURFACE CHEMISTRY;

HIGH DENSITY CAPACITORS; STO LAYERS; SURFACE CAPACITANCE;

MIM DEVICES;

EID: 33751180807     PISSN: 10584587     EISSN: 16078489     Source Type: Conference Proceeding    
DOI: 10.1080/10584580490898560     Document Type: Article

References (8)

1. K. Akedo, H. Fujisaka, M. Suzuki, and Y. Taga, Highly insulated STO thin films. International Conference on Ion Implantation, IEEE, Piscataway, NJ, USA. 2, 970-973 (1998).
2. K. Radhakrishnan, C. L. Tan, H. Q. Zheng, and G. I. Ng, Preparation and characterisation of RF-sputtered STO thin films, J. Vac. Sci. Technol. A 18(4), 1638-1641 (2000).
3. M. H. Yeh, K.-S. Liu, and I.-N. Lin, Structure and dielectric properties of STO films prepared by pulsed laser deposition technique, Jpn. J. Appl. Phys. 34, 2447-2452 (1995).
4. N.-K. Kim and S.-G. Yoon, Electrical and structural properties of STO thin films deposited by plasma-enhanced metalorganic chemical vapour deposition, J. Mater. Res. 12(4), 1160-1164 (1997).
5. C.-J. Peng, H. Hu, and S. B. Krupanidhi, Electrical properties of STO thin films by multi-ion beam reactive sputtering technique, Appl. Phys. Lett. 63(8), 1039-1040 (1993).
6. T. Saito, X. Cai, K. Usami, T. Kobayashi, and T. Goto, Fabrication of a high-Tc super-conducting field effect transistor by ion beam sputtering, IEEE Transactions on Applied Superconductivity 7(2), 3528-3531 (1997).
7. 3 thin films, Appl. Phys. Lett. 73(4), 464-466 (1998).
8. K. Natori, Otani Daijiro, and Sano Nobuyuki, Thickness dependence of the effective dielectric constant in a thin film capacitor, Appl. Phys. Lett. 73(5), 632-634 (1998).