Reduced leakage current in chemical solution deposited multiferroic BiFe O3 Ba0.25 Sr0.75 Ti O3 heterostructured thin films on platinized silicon substrates

Applied Physics Letters

Volumn 92, Issue 13, 2008, Pages

  Murari, N M ^a   Kumar, A ^a   Thomas, R ^a   Katiyar, R S ^a  

^a UNIVERSITY OF PUERTO RICO   (Puerto Rico)

Author keywords

[No Author keywords available]

Indexed keywords

COERCIVE FORCE; LEAKAGE CURRENTS; MIM DEVICES; SATURATION MAGNETIZATION; SILICON; SUBSTRATES;

CRYSTALLINE STRUCTURE; HETEROSTRUCTURED FILMS; PLATINIZED SILICON SUBSTRATES;

THIN FILMS;

EID: 41649100677     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2903495     Document Type: Article

References (22)

1. N. A. Spaldin and M. Fiebig, Science 309, 391 (2005).
2. W. Eerenstein, N. D. Mathur, and J. F. Scott, Nature (London) 442, 759 (2006).
3. J. Wang, J. B. Neaton, H. Zheng, V. Nagarajan, S. B. Ogale, B. Liu, D. Viehland, V. Vaithyanathan, D. G. Schlom, U. V. Waghmare, N. A. Spaldin, K. M. Rabe, M. Wuttig, and R. Ramesh, Science 299, 1719 (2003).
4. M. K. Singh, S. Ryu, and H. M. Jang, Phys. Rev. B 72, 132101 (2005).
5. G. A. Somlenskii and I. Chupis, Sov. Phys. Usp. 25, 475 (1982).
6. F. Kubel and H. Schmid, J. Cryst. Growth 129, 515 (1993).
7. P. Fischer, M. Polemska, I. Sosnowska, and M. Szymanski, J. Phys. A 13, 1931 (1980).
8. T. Maeder, P. Muralt, L. Sagalowicz, I. Reaney, M. Kholi, and N. Setter, Appl. Phys. Lett. 69, 1509 (1996).
9. Y. P. Wang, L. Zhou, M. F. Zhang, X. Y. Chen, J. M. Liu, and Z. G. Liu, Appl. Phys. Lett. 84, 1731 (2004).
10. F. Huang and X. Lu, Appl. Phys. Lett. 91, 072911 (2007).
11. S. K. Singh, H. Ishiwara, K. Sato, and K. Maruyama, J. Appl. Phys. 102, 094109 (2007).
12. P. Ehrhart and R. Thomas, J. Appl. Phys. 99, 114108 (2006).
13. N. K. Karan, J. J. Saavedra-Arias, M. Perez, R. Thomas, and R. S. Katiyar, Appl. Phys. Lett. 92, 012903 (2008).
14. R. Thomas, R. Bhakta, P. Ehrhart, and A. Devi, Surf. Coat. Technol. 201, 9135 (2007).
15. J. R. Teague, R. Gerson, and W. J. James, Solid State Commun. 8, 1073 (1970).
16. X. Qi, J. Dho, R. Tomov, M. G. Blamire, and M. Driscoll, Appl. Phys. Lett. 86, 062903 (2006).
17. G. W. Pabst, L. W. Martin, Y. H. Chu, and R. Ramesh, Appl. Phys. Lett. 90, 072902 (2007).
18. S. K. Singh, K. Maruyama, and H. Ishiwara, J. Phys. D 40, 2705 (2007).
19. M. M. Kumar, V. R. Palkar, K. Srinivas, and S. V. Suryanarayana, Appl. Phys. Lett. 76, 2764 (2000).
20. X. Qi, J. Dho, R. Tomov, M. G. Blamire, and J. L. MacManus-Driscoll, Appl. Phys. Lett. 86, 062903 (2005).
21. Z. Abdelkafi, N. Abdelmoula, H. Khemakhem, O. Bidault, and M. Maglione, J. Appl. Phys. 100, 114111 (2006).
22. R. Thomas, V. K. Varadan, S. Komerneni, and D. C. Dube, J. Appl. Phys. 90, 1480 (2001).