An extended CMOS ISFET model incorporating the physical design geometry and the effects on performance and offset variation

IEEE Transactions on Electron Devices

Volumn 58, Issue 12, 2011, Pages 4414-4422

  Liu, Yan ^a   Georgiou, Pantelis ^a   Prodromakis, Themistoklis ^a   Constandinou, Timothy G ^a   Toumazou, Christofer ^a  

^a IMPERIAL COLLEGE LONDON   (United Kingdom)

Author keywords

Chemical sensor; CMOS; drift; geometry; ion sensitive field effect transistor (ISFET); noise; passivation capacitance; subthreshold slope; threshold voltage

Indexed keywords

CHEMICAL SENSING; CHEMICAL SENSITIVITY; CMOS; CMOS TECHNOLOGY; DESIGN PARAMETERS; DRIFT; EXTENDED MODEL; MOS-FET; NOISE; NON-IDEALITIES; PHYSICAL DESIGN; PHYSICAL GEOMETRY; SECOND ORDER EFFECT; SENSOR NOISE; SIMULATED RESULTS; SUBTHRESHOLD SLOPE; THRESHOLD VOLTAGE VARIATION;

CHEMICAL SENSORS; CMOS INTEGRATED CIRCUITS; GEOMETRY; ION SENSITIVE FIELD EFFECT TRANSISTORS; MOSFET DEVICES; THRESHOLD VOLTAGE;

DESIGN;

EID: 82155166230     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2011.2168821     Document Type: Article

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